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CMPF4391_10

更新时间: 2024-01-18 17:05:34
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CENTRAL /
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2页 328K
描述
SURFACE MOUNT N-CHANNEL SILICON JFET

CMPF4391_10 数据手册

 浏览型号CMPF4391_10的Datasheet PDF文件第2页 
CMPF4391  
CMPF4392  
CMPF4393  
www.centralsemi.com  
SURFACE MOUNT  
N-CHANNEL  
SILICON JFET  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMPF4391 series  
types are N-Channel Silicon Field Effect Transistors  
manufactured by the epitaxial planar process, epoxy  
molded in a surface mount package, designed for  
switching applications.  
MARKING CODE:  
CMPF4391:  
CMPF4392:  
CMPF4393:  
6J  
6K  
6G  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Drain-Gate Voltage  
V
V
40  
GD  
GS  
Gate-Source Voltage  
Drain-Source Voltage  
Gate Current  
40  
40  
V
V
V
DS  
I
50  
mA  
mW  
°C  
G
Power Dissipation  
P
350  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
CMPF4391  
MIN MAX  
CMPF4392  
MIN MAX  
CMPF4393  
MIN MAX  
SYMBOL  
TEST CONDITIONS  
UNITS  
nA  
µA  
mA  
nA  
nA  
nA  
µA  
µA  
µA  
V
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
V
=20V  
-
0.1  
0.2  
150  
0.1  
-
-
0.1  
0.2  
75  
-
-
0.1  
0.2  
30  
-
GSS  
GS  
GS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
=20V, T =100°C  
-
-
-
GSS  
A
=20V  
50  
25  
5.0  
DSS  
=20V, V =12V  
-
-
-
D(OFF)  
D(OFF)  
D(OFF)  
D(OFF)  
D(OFF)  
D(OFF)  
GS  
=20V, V =7.0V  
GS  
=20V, V =5.0V  
-
-
0.1  
-
-
-
-
-
-
-
0.1  
-
GS  
=20V, V =12V, T =100°C  
GS  
=20V, V =7.0V, T =100°C  
-
0.2  
-
-
-
-
A
-
-
0.2  
-
-
-
GS  
A
=20V, V =5.0V, T =100°C  
-
-
-
-
0.2  
-
GS  
A
BV  
I =1.0µA  
40  
-
40  
40  
GSS  
GS(OFF)  
GS(f)  
G
V
V
V
V
V
V
=20V, I =1.0nA  
4.0  
10  
1.0  
0.4  
-
2.0  
5.0  
1.0  
-
0.5  
3.0  
1.0  
-
V
DS  
I =1.0mA  
D
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
G
I =12mA  
V
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
ds(ON)  
D
I =6.0mA  
0.4  
-
-
V
D
I =3.0mA  
-
0.4  
100  
100  
14  
V
D
r
r
I =1.0mA, V =0  
GS  
30  
30  
14  
60  
60  
14  
Ω
D
V
=0, I =0, f=1.0kHz  
Ω
GS  
DS  
D
C
V
=20V, V =0, f=1.0MHz  
GS  
pF  
iss  
R5 (27-January 2010)  

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