是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.76 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 1 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.35 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CMPDM7120GTRPBFREE | CENTRAL |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
CMPDM7590TR13 | CENTRAL |
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Transistor | |
CMPDM7590TRPBFREE | CENTRAL |
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Transistor, | |
CMPDM8002A | CENTRAL |
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SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | |
CMPDM8002ABK | CENTRAL |
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Transistor | |
CMPDM8002ATIN/LEAD | CENTRAL |
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Small Signal Field-Effect Transistor, | |
CMPDM8002ATR | CENTRAL |
获取价格 |
暂无描述 | |
CMPDM8002ATR13 | CENTRAL |
获取价格 |
Transistor, | |
CMPDM8002ATR13LEADFREE | CENTRAL |
获取价格 |
Transistor | |
CMPDM8002ATR13PBFREE | CENTRAL |
获取价格 |
Transistor, |