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CMPDM7590TR13 PDF预览

CMPDM7590TR13

更新时间: 2024-10-01 09:02:03
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Transistor

CMPDM7590TR13 数据手册

 浏览型号CMPDM7590TR13的Datasheet PDF文件第2页 
TM  
CMPDM3590 N-CH  
CMPDM7590 P-CH  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
DESCRIPTION:  
N-CHANNEL AND P-CHANNEL  
ENHANCEMENT-MODE  
The CENTRAL SEMICONDUCTOR CMPDM3590  
and CMPDM7590 are complementary N-Channel  
and P-Channel Enhancement-mode silicon MOSFETs  
designed for high speed pulsed amplifier and driver  
applications. These devices offer desirable MOSFET  
electrical characteristics in an economical industry  
standard SOT-23 package.  
COMPLEMENTARY MOSFETS  
MARKING CODES: CMPDM3590: C359  
CMPDM7590: C759  
SOT-23 CASE  
• Devices are Halogen Free by design  
FEATURES:  
• ESD Protection up to 2kV  
• Power Dissipation: 350mW  
• Low Threshold Voltage  
• Logic Level Compatibility  
• Small SOT-23 Surface Mount Package  
APPLICATIONS:  
• Load/Power Switches  
• Power Supply Converter Circuits  
• Battery Powered Portable Devices  
MAXIMUM RATINGS: (T =25°C)  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current (Steady State)  
SYMBOL CMPDM3590  
CMPDM7590  
UNITS  
V
V
mA  
mA  
mW  
°C  
A
V
V
I
I
20  
8.0  
DS  
GS  
D
D
160  
200  
140  
180  
Continuous Drain Current (t < 5s)  
p
Power Dissipation  
P
350  
-65 to +150  
357  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
stg  
J
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
CMPDM3590  
CMPDM7590  
MIN TYP MAX  
A
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX  
UNITS  
nA  
nA  
nA  
V
V
Ω
Ω
Ω
Ω
Ω
S
pF  
pF  
pF  
ns  
ns  
I
I
I
, I  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5.0V, V =0V  
-
-
-
20  
-
-
-
-
100  
50  
100  
-
-
-
-
20  
-
-
-
-
100  
50  
100  
-
GSSF GSSR  
DSS  
DSS  
GS  
DS  
DS  
GS  
DS  
=5.0V, V =0V  
GS  
=16V, V =0V  
GS  
BV  
V
=0V, I =250μA  
DSS  
GS(th)  
D
=V , I =250μA  
0.4  
-
1.0  
3.0  
4.0  
6.0  
10  
-
-
-
-
-
0.4  
-
1.0  
5.0  
7.0  
10  
17  
-
-
-
-
-
DS GS  
D
D
D
D
D
D
D
r
r
r
r
r
=4.5V, I =100mA  
-
-
-
-
-
-
-
-
-
-
-
1.5  
2.0  
3.0  
4.0  
7.0  
1.3  
2.2  
9.0  
3.0  
40  
150  
-
-
-
-
-
-
-
-
-
-
-
4.0  
5.5  
8.0  
11  
20  
1.3  
1.0  
12  
2.7  
60  
210  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
GS  
GS  
GS  
GS  
GS  
DS  
DS  
DS  
DS  
DD  
DD  
=2.5V, I =50mA  
=1.8V, I =20mA  
=1.5V, I =10mA  
=1.2V, I =1.0mA  
g
=5.0V, I =125mA  
FS  
rss  
iss  
C
C
C
=15V, V =0V, f=1.0MHz  
GS  
=15V, V =0V, f=1.0MHz  
GS  
=15V, V =0V, f=1.0MHz  
oss  
GS  
GS  
t
t
=10V, V =4.5V, I =200mA  
=10V, V =4.5V, I =200mA  
GS  
-
-
-
-
on  
off  
D
D
R0 (19-May 2009)  

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