5秒后页面跳转
CMPDM8002ATR13PBFREE PDF预览

CMPDM8002ATR13PBFREE

更新时间: 2023-02-26 13:44:31
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 324K
描述
Transistor,

CMPDM8002ATR13PBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.61
配置:Single最大漏极电流 (Abs) (ID):0.28 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.35 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

CMPDM8002ATR13PBFREE 数据手册

 浏览型号CMPDM8002ATR13PBFREE的Datasheet PDF文件第2页 
CMPDM8002A  
SURFACE MOUNT  
P-CHANNEL  
ENHANCEMENT-MODE  
SILICON MOSFET  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMPDM8002A  
is an Enhancement-mode P-Channel Field Effect  
Transistor, manufactured by the P-Channel DMOS  
Process, designed for high speed pulsed amplifier and  
driver applications.  
MARKING CODE: C802A  
FEATURES:  
SOT-23 CASE  
• Low r  
DS(ON)  
• Low V  
DS(ON)  
APPLICATIONS:  
• Load/Power switches  
• Power supply converter circuits  
• Battery powered portable equipment  
• Low threshold voltage  
• Fast switching  
• Logic level compatibility  
MAXIMUM RATINGS: (T =25°C)  
Drain-Source Voltage  
SYMBOL  
UNITS  
V
A
V
50  
50  
DS  
DG  
GS  
Drain-Gate Voltage  
V
V
V
V
Gate-Source Voltage  
20  
Continuous Drain Current  
Continuous Source Current (Body Diode)  
Maximum Pulsed Drain Current  
Maximum Pulsed Source Current  
Power Dissipation  
I
280  
mA  
mA  
A
D
I
280  
S
I
1.5  
DM  
I
1.5  
A
SM  
P
350  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
, I  
V
V
V
V
V
V
V
V
V
V
V
V
V
=20V, V =0  
100  
nA  
GSSF GSSR  
GS  
DS  
DS  
GS  
GS  
DS  
=50V, V =0  
GS  
1.0  
μA  
μA  
mA  
V
DSS  
=50V, V =0, T =125°C  
500  
DSS  
GS  
J
=10V, V =10V  
500  
50  
D(ON)  
DS  
BV  
=0, I =10μA  
D
DSS  
GS(th)  
DS(ON)  
DS(ON)  
SD  
V
V
V
V
=V , I =250μA  
1.0  
2.5  
1.5  
0.15  
1.3  
2.5  
4.0  
3.0  
5.0  
V
DS GS  
D
=10V, I =500mA  
V
GS  
GS  
GS  
GS  
GS  
GS  
GS  
D
=5.0V, I =50mA  
V
D
=0, I =115mA  
V
S
r
r
r
r
=10V, I =500mA  
Ω
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
D
=10V, I =500mA, T =125°C  
Ω
D
J
=5.0V, I =50mA  
Ω
D
=5.0V, I =50mA, T =125°C  
Ω
D
J
R1 (27-January 2010)  

与CMPDM8002ATR13PBFREE相关器件

型号 品牌 获取价格 描述 数据表
CMPDM8002ATRLEADFREE CENTRAL

获取价格

Transistor
CMPDM8120 CENTRAL

获取价格

SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CMPDM8120BKLEADFREE CENTRAL

获取价格

Transistor
CMPDM8120BKPBFREE CENTRAL

获取价格

Transistor,
CMPDM8120TRLEADFREE CENTRAL

获取价格

Transistor
CMPDM8120TRPBFREE CENTRAL

获取价格

暂无描述
CMPDZA43V CENTRAL

获取价格

Zener Diode, 43V V(Z), 6.98%, 0.35W, Silicon, Unidirectional, SOT-23, 3 PIN
CMPDZA43VLEADFREE CENTRAL

获取价格

Zener Diode, 43V V(Z), 6.98%, 0.35W, Silicon, Unidirectional, SOT-23, 3 PIN
CMPESD24CA CENTRAL

获取价格

SURFACE MOUNT SILICON DUAL, BI-DIRECTIONAL ESD PROTECTION DIODE
CMPF4391 CENTRAL

获取价格

N-CHANNEL JFET