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CMLD6001DOBKPBFREE PDF预览

CMLD6001DOBKPBFREE

更新时间: 2024-11-19 12:59:07
品牌 Logo 应用领域
CENTRAL 二极管开关
页数 文件大小 规格书
2页 88K
描述
Diode,

CMLD6001DOBKPBFREE 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.59
Is Samacsys:N最大正向电压 (VF):0.85 V
最高工作温度:150 °C最低工作温度:-65 °C
最大功率耗散:0.25 W最大重复峰值反向电压:100 V
最大反向电流:0.0005 µA最大反向恢复时间:3 µs
反向测试电压:75 V子类别:Other Diodes
表面贴装:YESBase Number Matches:1

CMLD6001DOBKPBFREE 数据手册

 浏览型号CMLD6001DOBKPBFREE的Datasheet PDF文件第2页 
TM  
CMLD6001  
Central  
SURFACE MOUNT  
Semiconductor Corp.  
PICOmini  
DUAL, ISOLATED  
LOW LEAKAGE SILICON  
SWITCHING DIODES  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLD6001  
type contains Two (2) Isolated Silicon Switching  
Diodes, manufactured by the epitaxial planar  
process, epoxy molded in a PICOmini surface  
mount package. These devices are designed for  
switching applications requiring extremely low  
leakage.  
MARKING CODE: C6D  
SOT-563 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
V
V
mA  
mA  
mA  
mW  
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Forward Surge Current, tp=1 µsec.  
Forward Surge Current, tp=1 sec.  
Power Dissipation  
V
75  
100  
250  
4000  
1000  
250  
R
V
RRM  
F
I
I
I
FSM  
FSM  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
stg  
-65 to +150  
500  
°C  
°C/W  
J
Θ
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =75V  
MIN  
MAX  
500  
UNITS  
pA  
V
V
V
V
pF  
µs  
I
R
R
BV  
I =100µA  
100  
R
R
V
V
V
I =1.0mA  
0.85  
0.95  
1.1  
2.0  
3.0  
F
F
F
F
I =10mA  
F
I =100mA  
F
C
V =0, f=1 MHz  
T
R
t
I =I =10mA, R =100Rec. to 1.0mA  
rr  
R
F
L
R0 (3-November 2003)  

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