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CMLD4448DOGTR PDF预览

CMLD4448DOGTR

更新时间: 2024-11-19 20:05:55
品牌 Logo 应用领域
CENTRAL 测试光电二极管
页数 文件大小 规格书
2页 105K
描述
Rectifier Diode, 2 Element, 0.25A, 120V V(RRM), Silicon, PLASTIC, PICOMINI-6

CMLD4448DOGTR 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:PLASTIC, PICOMINI-6针数:6
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.26
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.65 V
JESD-30 代码:R-PDSO-F6JESD-609代码:e0
元件数量:2端子数量:6
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.25 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.25 W
认证状态:Not Qualified最大重复峰值反向电压:120 V
最大反向电流:100 µA最大反向恢复时间:0.004 µs
反向测试电压:50 V子类别:Other Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CMLD4448DOGTR 数据手册

 浏览型号CMLD4448DOGTR的Datasheet PDF文件第2页 
TM  
CMLD4448DO  
CMLD4448DOG  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
PICOmini™  
DUAL, ISOLATED, OPPOSING  
HIGH SPEED SILICON  
SWITCHING DIODES  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLD4448DO  
and CMLD4448DOG each contain two (2) Isolated  
Opposing Configuration, Silicon Switching Diodes,  
manufactured by the epitaxial planar process, epoxy  
molded in a PICOmini surface mount package. These  
devices are designed for high speed switching applications.  
The CMLD4448DOG is Halogen Free by design.  
MARKING CODES:  
CMLD4448DO: C40  
SOT-563 CASE  
CMLD4448DOG: 4CG  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=1ms  
Forward Surge Current, tp=1s  
Power Dissipation  
V
120  
250  
RRM  
I
mA  
mA  
A
F
I
500  
FRM  
I
I
4.0  
FSM  
1.0  
A
FSM  
P
250  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
500  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
300  
100  
500  
UNITS  
nA  
μA  
nA  
V
I
I
I
V =50V  
R
R
R
R
V =50V, T =125°C  
R
A
V =100V  
R
BV  
I =100μA  
120  
0.55  
0.67  
0.85  
150  
0.59  
0.72  
0.91  
R
R
V
V
V
I =1.0mA  
0.65  
0.77  
1.0  
V
F
F
F
F
I =10mA  
V
F
I =100mA  
V
F
C
V =0, f=1 MHz  
1.5  
pF  
ns  
T
R
t
I =I =10mA, R =100Ω, Rec. to 1.0mA  
2.0  
4.0  
rr  
R
F
L
R3 (28-July 2008)  

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