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CMLD4448DOTR PDF预览

CMLD4448DOTR

更新时间: 2024-11-20 07:04:03
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
1页 172K
描述
Rectifier Diode, 2 Element, 0.25A, 120V V(RRM), Silicon, PLASTIC, PICOMINI-6

CMLD4448DOTR 数据手册

  
CMLD4448DO  
CMLD4448DOG  
www.centralsemi.com  
SURFACE MOUNT SILICON  
DUAL, ISOLATED, OPPOSING  
HIGH SPEED  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLD4448DO  
and CMLD4448DOG each contain two (2) isolated  
opposing configuration, silicon switching diodes,  
manufactured by the epitaxial planar process, epoxy  
molded in an SOT-563 surface mount package. These  
devices are designed for high speed  
SWITCHING DIODES  
switching applications.  
MARKING CODES:  
CMLD4448DO: C40  
CMLD4448DOG: 4CG  
SOT-563 CASE  
• The CMLD4448DOG is Halogen Free by design  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Peak Repetitive Reverse Voltage  
V
120  
250  
RRM  
Continuous Forward Current  
I
mA  
mA  
A
F
Peak Repetitive Forward Current  
Peak Forward Surge Current, tp=1.0μs  
Peak Forward Surge Current, tp=1.0s  
Power Dissipation  
I
500  
FRM  
I
4.0  
FSM  
I
1.0  
A
FSM  
P
250  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
500  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL TEST CONDITIONS  
MIN  
TYP  
MAX  
300  
100  
500  
UNITS  
nA  
μA  
nA  
V
I
I
I
V =50V  
R
R
R
R
V =50V, T =125°C  
R
A
V =100V  
R
BV  
I =100μA  
120  
0.55  
0.67  
0.85  
150  
0.59  
0.72  
0.91  
R
R
V
V
V
I =1.0mA  
0.65  
0.77  
1.0  
V
F
F
F
F
I =10mA  
V
F
I =100mA  
V
F
C
V =0, f=1.0MHz  
1.5  
pF  
ns  
J
R
t
I =I =10mA, I =1.0mA, R =100Ω  
2.0  
4.0  
rr  
R
F
rr  
L
R6 (15-June 2015)  

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