Datasheet > CMLD4448TRLEADFREE

CMLD4448TRLEADFREE

更新时间： 2024-11-19 21:16:43

品牌	Logo	应用领域
CENTRAL		测试
页数	文件大小	规格书
2页	577K
描述
Diode,

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中文翻译

获取价格

技术参数
数据手册

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CMLD4448TRLEADFREE 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.84	最大正向电压 (VF)：	0.65 V
最高工作温度：	150 °C	最低工作温度：	-65 °C
最大功率耗散：	0.25 W	最大重复峰值反向电压：	120 V
最大反向电流：	100 µA	最大反向恢复时间：	0.004 µs
反向测试电压：	50 V	子类别：	Other Diodes
表面贴装：	YES	Base Number Matches：	1

CMLD4448TRLEADFREE 数据手册

CMLD4448

SURFACE MOUNT

DUAL, ISOLATED

HIGH SPEED SILICON

SWITCHING DIODES

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLD4448

type contains two (2) Isolated Silicon Switching Diodes,

manufactured by the epitaxial planar process,

™

epoxy molded in a PICOmini surface mount package.

These devices are designed for high speed

switching applications.

MARKING CODE: C48

SOT-563 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

120

250

RRM

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

500

FRM

4.0

FSM

1.0

250

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

500

stg

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

TYP

MAX

300

100

500

UNITS

μA

V =50V

V =50V, T =125°C

V =100V

I =100μA

120

0.55

0.67

0.85

150

0.59

0.72

0.91

I =1.0mA

0.65

0.77

1.0

I =10mA

I =100mA

V =0, f=1.0MHz

1.5

I =I =10mA, R =100Ω, Rec. to 1.0mA

2.0

4.0

R3 (18-January 2010)

中文翻译

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CMLD6001DO_10	CENTRAL	获取价格	SURFACE MOUNT DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES
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