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CMLD4448_10 PDF预览

CMLD4448_10

更新时间: 2024-11-19 09:27:27
品牌 Logo 应用领域
CENTRAL 二极管开关
页数 文件大小 规格书
2页 577K
描述
SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES

CMLD4448_10 数据手册

 浏览型号CMLD4448_10的Datasheet PDF文件第2页 
CMLD4448  
SURFACE MOUNT  
DUAL, ISOLATED  
HIGH SPEED SILICON  
SWITCHING DIODES  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLD4448  
type contains two (2) Isolated Silicon Switching Diodes,  
manufactured by the epitaxial planar process,  
epoxy molded in a PICOmini surface mount package.  
These devices are designed for high speed  
switching applications.  
MARKING CODE: C48  
SOT-563 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Peak Repetitive Reverse Voltage  
V
120  
250  
RRM  
Continuous Forward Current  
I
mA  
mA  
A
F
Peak Repetitive Forward Current  
Peak Forward Surge Current, tp=1.0μs  
Peak Forward Surge Current, tp=1.0s  
Power Dissipation  
I
500  
FRM  
I
4.0  
FSM  
FSM  
I
1.0  
A
P
250  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
500  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL TEST CONDITIONS  
MIN  
TYP  
MAX  
300  
100  
500  
UNITS  
nA  
μA  
nA  
V
I
I
I
V =50V  
R
R
R
R
V =50V, T =125°C  
R
A
V =100V  
R
BV  
I =100μA  
120  
0.55  
0.67  
0.85  
150  
0.59  
0.72  
0.91  
R
R
V
V
V
I =1.0mA  
0.65  
0.77  
1.0  
V
F
F
F
F
I =10mA  
V
F
I =100mA  
V
F
C
V =0, f=1.0MHz  
1.5  
pF  
ns  
T
R
t
I =I =10mA, R =100Ω, Rec. to 1.0mA  
2.0  
4.0  
rr  
R
F
L
R3 (18-January 2010)  

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