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CMLD4448DO PDF预览

CMLD4448DO

更新时间: 2024-11-18 21:55:23
品牌 Logo 应用领域
CENTRAL 二极管开关
页数 文件大小 规格书
2页 89K
描述
DUAL, ISOLATED, OPPOSING HIGH SPEED SILICON SWITCHING DIODES

CMLD4448DO 数据手册

 浏览型号CMLD4448DO的Datasheet PDF文件第2页 
TM  
CMLD4448DO  
Central  
SURFACE MOUNT  
Semiconductor Corp.  
PICOmini  
DUAL, ISOLATED, OPPOSING  
HIGH SPEED SILICON  
SWITCHING DIODES  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLD4448DO  
type contains two (2) Isolated Opposing Configuration,  
Silicon Switching Diodes, manufactured by the epitaxial  
planar process, epoxy molded in a PICOmini surface  
mount package. These devices are designed for high  
speed switching applications.  
MARKING CODE: C40  
SOT-563 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
V
mA  
mA  
A
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=1ms  
Forward Surge Current, tp=1s  
Power Dissipation  
V
120  
250  
500  
4.0  
1.0  
300  
RRM  
F
I
I
I
I
FRM  
FSM  
FSM  
A
mW  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
stg  
-65 to +150  
417  
°C  
°C/W  
J
Θ
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
BV  
TEST CONDITIONS  
I =100µA  
MIN  
120  
TYP  
150  
MAX  
UNITS  
V
nA  
µA  
nA  
V
R
R
I
I
I
V =50V  
300  
100  
500  
0.65  
0.77  
1.0  
R
R
R
R
V =50V, T =125°C  
R
A
V =100V  
R
V
V
V
I =1.0mA  
0.55  
0.67  
0.85  
0.59  
0.72  
0.91  
F
F
F
F
I =10mA  
V
F
I =100mA  
V
F
C
V =0, f=1 MHz  
1.5  
pF  
ns  
T
R
t
I =I =10mA, R =100, Rec. to 1.0mA  
2.0  
4.0  
rr  
R
F
L
R1 (2-December 2003)  

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