是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-XUFM-X5 |
Reach Compliance Code: | unknown | 风险等级: | 5.89 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 200 A | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE WITH BUILT-IN DIODE | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X5 | 元件数量: | 1 |
端子数量: | 5 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 830 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | GENERAL PURPOSE SWITCHING | 晶体管元件材料: | SILICON |
VCEsat-Max: | 2.4 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CM200E3Y12E | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 200A I(C) | |
CM200E3Y-12E | MITSUBISHI |
获取价格 |
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel | |
CM200E3Y24E | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 200A I(C) | |
CM200EXS-24S | POWEREX |
获取价格 |
Chopper IGBT NX-Series Module 200 Amperes/1200 Volts | |
CM200EXS-24S | MITSUBISHI |
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IGBT模块 S系列 CM200EXS-24S | |
CM200EXS-34SA | POWEREX |
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Chopper IGBT NX-Series Module 200 Amperes/1700 Volts | |
CM200EXS-34SA | MITSUBISHI |
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IGBT模块 S系列 CM200EXS-34SA | |
CM200G | CONNOR-WINFIELD |
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Parallel - Fundamental Quartz Crystal, 0.032768MHz Nom, ROHS COMPLIANT, HERMETIC SEALED PA | |
CM200G-032.768K | CONNOR-WINFIELD |
获取价格 |
Parallel - Fundamental Quartz Crystal, 0.032768MHz Nom, ROHS COMPLIANT, HERMETIC SEALED PA | |
CM200G-32.768KHZ | CONNOR-WINFIELD |
获取价格 |
Parallel - Fundamental Quartz Crystal, 0.032768MHz Nom, ROHS COMPLIANT, HERMETIC SEALED PA |