CM100DY-28H

更新时间： 2024-11-16 22:50:31

品牌	Logo	应用领域
POWEREX		双极性晶体管
页数	文件大小	规格书
4页	71K
描述
Dual IGBTMOD 100 Amperes/1400 Volts

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中文翻译

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数据手册

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CM100DY-28H 数据手册

CM100DY-28H

Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Dual IGBTMOD™

H-Series Module

100 Amperes/1400 Volts

C2E1

Description:

R - M5 THD (3 TYP.)

P - DIA. (2 TYP.)

Powerex IGBTMOD™ Modules

are designed for use in switching

applications. Each module consists

of two IGBT Transistors in a

half-bridge configuration with each

transistor having a reverse-

connected super-fast recovery

free-wheel diode. All components

and interconnects are isolated

from the heat sinking baseplate,

offering simplified system assembly

and thermal management.

.110 TAB

Features:

□ Low Drive Power

□ Low V

CE(sat)

□ Discrete Super-Fast Recovery

(135ns) Free Wheel Diode

C2E1

□ High Frequency Operation

(20-25kHz)

□ Isolated Baseplate for Easy

Heat Sinking

Applications:

□ AC Motor Control

Outline Drawing and Circuit Diagram

□ Motion/Servo Control

□ UPS

□ Welding Power Supplies

□ Laser Power Supplies

Dimensions

Inches

3.70

Millimeters

94.0

Dimensions

Inches

0.51

Millimeters

13.0

12.0

7.5

3.150±0.01

1.89

80.0±0.25

48.0

0.47

0.30

Ordering Information:

1.18 Max.

0.90

30.0 Max.

23.0

0.28

7.0

Example: Select the complete part

module number you desire from

the table below -i.e. CM100DY-28H

0.256 Dia.

0.26

Dia. 6.5

6.5

0.83

21.2

is a 1400V (V

Dual IGBTMOD™ Power Module.

), 100 Ampere

0.71

18.0

M5 Metric

0.16

CES

0.67

17.0

4.0

Type

Current Rating

Amperes

CES

0.63

16.0

Volts (x 50)

100

12 3 4

中文翻译

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与CM100DY-28H相关器件

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CM100DY-34A	MITSUBISHI	获取价格	HIGH POWER SWITCHING USE
CM100DY-34A_09	MITSUBISHI	获取价格	IGBT MODULES HIGH POWER SWITCHING USE
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CM100E3U-12H	POWEREX	获取价格	Chopper IGBTMOD 100 Amperes/600 Volts
CM100E3U-12H	MITSUBISHI	获取价格	HIGH POWER SWITCHING USE INSULATED TYPE
CM100E3U-12H_09	MITSUBISHI	获取价格	IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
CM100E3U-24F	MITSUBISHI	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
CM100E3U24H	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 1.2KV V(BR)CES \| 100A I(C)