Datasheet > CM04N65AF

CM04N65AF

更新时间： 2024-11-19 17:14:59

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1282K
描述
TO-220F

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CM04N65AF 数据手册

CM04N65AP/F

N-Channel 650V (D-S) Power MOSFET

Description

Applications

The CM04N65AP/F is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage planar technology. This high density process and

design have been optimized switching performance and

especially tailored to minimize on-state resistance, .



AC/DC load switch

SMPS

LED power

Marking Information

Features

X=Package type



VDS: 650V

G=Halogen Free

ID (@VGS=10V): 4.3A

04N65AXG

XXXX

XXXX = Marking Code

RDS_ON(@VGS=10V) : < 2.7Ω

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

P/N

Package Type Packaging

Remark

ROHS

TO-220

TO-220F

CM04N65AP

CM04N65APG

CM04N65AF

CM04N65AFG

TO-220

Tube

Halogen Free

ROHS

TO-220F

Halogen Free

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Maximum

Parameter

Drain-source Voltage

Symbol

Unit

CM04N65AP CM04N65AF

VDS

VGS

650

±30

Gate-source Voltage

Tc=25°C

4.3

2.7

4.3⁽⁴⁾

2.7⁽⁴⁾

17⁽⁴⁾

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

106

0.85

1.18

0.29

3.5

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

May. 2022, Rev. 1.0

1 of 5

www.appliedpowermicro.com

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