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CM04N65AP PDF预览

CM04N65AP

更新时间: 2024-11-03 17:14:59
品牌 Logo 应用领域
应能微 - APPLIED POWER /
页数 文件大小 规格书
5页 1282K
描述
TO-220

CM04N65AP 数据手册

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CM04N65AP/F  
N-Channel 650V (D-S) Power MOSFET  
Description  
Applications  
The CM04N65AP/F is the N-Channel enhancement mode  
power field effect transistors with high cell density, high  
voltage planar technology. This high density process and  
design have been optimized switching performance and  
especially tailored to minimize on-state resistance, .  
AC/DC load switch  
SMPS  
LED power  
Marking Information  
Features  
X=Package type  
VDS: 650V  
G=Halogen Free  
ID (@VGS=10V): 4.3A  
04N65AXG  
XXXX  
XXXX = Marking Code  
RDSON (@VGS=10V) : < 2.7Ω  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
Ordering Information  
Equivalent Circuit and Pin Configuration  
P/N  
Package Type Packaging  
Remark  
ROHS  
TO-220  
TO-220F  
CM04N65AP  
CM04N65APG  
CM04N65AF  
CM04N65AFG  
TO-220  
TO-220  
Tube  
Tube  
Tube  
Tube  
Halogen Free  
ROHS  
TO-220F  
TO-220F  
Halogen Free  
Absolute Maximum Ratings (Tc=25 unless otherwise noted)  
Maximum  
Parameter  
Drain-source Voltage  
Symbol  
Unit  
CM04N65AP CM04N65AF  
VDS  
VGS  
650  
±30  
V
V
Gate-source Voltage  
Tc=25°C  
4.3  
2.7  
4.3(4)  
2.7(4)  
17(4)  
36  
A
Continuous Drain Current (1)  
Pulsed Drain Current(2)  
Total Power Dissipation (3)  
ID  
Tc=100°C  
A
IDM  
PD @ Tc=25°C  
Derating Factor above 25°C  
RθJC  
17  
A
106  
0.85  
1.18  
W
0.29  
3.5  
W/°C  
°C/W  
°C  
Thermal Resistance Junction-to-Case (3)  
Junction and Storage Temperature Range  
TJ,TSTG  
-55 to +150  
May. 2022, Rev. 1.0  
1 of 5  
www.appliedpowermicro.com  

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