Datasheet > CM04N65BTD

CM04N65BTD

更新时间： 2024-11-19 17:14:59

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1239K
描述
TO-251

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中文翻译

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数据手册

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CM04N65BTD 数据手册

CM04N65BTU/D

N-Channel 650V (D-S) Power MOSFET

Description

Applications

The CM04N65BTU/D is the N-Channel enhancement

mode power field effect transistors with high cell density,

high voltage planar technology. This high density process

and design have been optimized switching performance

and especially tailored to minimize on-state resistance, .



AC/DC load switch

SMPS

LED power

Marking Information

Features



VDS: 650V

X=Package type

ID (@VGS=10V): 4A

XXXX = Marking Code

04N65BTX

XXXX

RDS_ON(@VGS=10V) : < 2.7Ω

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

P/N

Package Type Packaging

Remark

ROHS

CM04N65BTU

CM04N65BTD

TO-252

TO-251

Tape and reel

Tube

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Maximum

Parameter

Drain-source Voltage

Symbol

Unit

CM04N65BTU CM04N65BTD

VDS

VGS

650

Gate-source Voltage

±30

Tc=25°C

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

0.7

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

1.6

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

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