Datasheet > CM04N80AD

CM04N80AD

更新时间： 2024-05-23 22:21:32

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1247K
描述
TO-251

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中文翻译

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数据手册

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CM04N80AD 数据手册

CM04N80AU/D

N-Channel 800V (D-S) Power MOSFET

Description

Applications

The CM04N80AU/D is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage planar technology. This high density process and

design have been optimized switching performance and

especially tailored to minimize on-state resistance.



AC/DC load switch

SMPS

Notebooks and Handhelds adapter

UPS Power

Marking Information

Features



V_DS: 800V

X = Package type

XXXX = Date Code

I_D(@V_GS=10V): 3.7A

04N80AX

XXXX

RDS_ON(@V_GS=10V) : < 3.8Ω

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

P/N

Package Type Packaging

Remark

ROHS

CM04N80AU

CM04N80AD

TO-252

TO-251

Tape and reel

Tube

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Drain-source Voltage

Symbol

Maximum

Unit

VDS

VGS

800

±20

Gate-source Voltage

Tc=25°C

3.7⁽⁴⁾

3⁽⁴⁾

14.8⁽⁴⁾

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

100

0.8

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

1.25

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Jun. 2022, Rev. 1.0

1 of 5

www.appliedpowermicro.com

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