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CM04N65AHU PDF预览

CM04N65AHU

更新时间: 2024-11-19 17:15:03
品牌 Logo 应用领域
应能微 - APPLIED POWER /
页数 文件大小 规格书
6页 1228K
描述
TO-252

CM04N65AHU 数据手册

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CM04N65AHU/D  
N-Channel 650V (D-S) Power MOSFET  
Description  
Applications  
The CM04N65AHU/D is the N-Channel enhancement  
mode power field effect transistors with high cell density,  
high voltage planar technology. This high density process  
and design have been optimized switching performance  
and especially tailored to minimize on-state resistance, .  
AC/DC load switch  
SMPS  
LED power  
Marking Information  
Features  
VDS: 650V  
X=Package type  
ID (@VGS=10V): 4A  
XXXX = Marking Code  
04N65AHX  
XXXX  
RDSON (@VGS=10V) : < 3.2Ω  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
Ordering Information  
Equivalent Circuit and Pin Configuration  
P/N  
Package Type Packaging  
Remark  
ROHS  
ROHS  
CM04N65AHU  
CM04N65AHD  
TO-252  
TO-251  
Tape and reel  
Tube  
Absolute Maximum Ratings (Tc=25 unless otherwise noted)  
Maximum  
Parameter  
Drain-source Voltage  
Symbol  
Unit  
CM04N65AHU CM04N65AHD  
VDS  
VGS  
650  
V
V
Gate-source Voltage  
±30  
Tc=25°C  
4
A
Continuous Drain Current (1)  
Pulsed Drain Current(2)  
Total Power Dissipation (3)  
ID  
Tc=100°C  
2
16  
A
IDM  
PD @ Tc=25°C  
Derating Factor above 25°C  
RθJC  
A
96  
W
0.77  
W/°C  
°C/W  
°C  
Thermal Resistance Junction-to-Case (3)  
1.3  
Junction and Storage Temperature Range  
TJ,TSTG  
-55 to +150  
Revision_1.0  
1 of 6  
www.appliedpowermicro.com  

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