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CLD141

更新时间: 2024-12-01 09:25:55
品牌 Logo 应用领域
其他 - ETC 光电二极管光电二极管
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1页 89K
描述
Silicon Planar photodiodes

CLD141 数据手册

  
®
Clairex  
CLD141, CLD141R  
Technologies, Inc.  
Silicon Planar photodiodes  
January, 2001  
0.100 (2.54) dia.  
0.156 (3.96)  
0.136 (3.45)  
1.00 (25.4) min.  
0.215 (5.46)  
0.205 (5.21)  
0.165 (4.19)  
0.145 (3.68)  
CATHODE  
0.190 (4.83)  
0.176 (4.47)  
ANODE  
0.025 (0.64) max.  
0.147 (3.73)  
0.137 (3.48)  
0.019 (0.48)  
0.016 (0.41)  
0.010 (0.25) max  
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)  
features  
absolute maximum ratings (TA = 25°C unless otherwise stated)  
70° acceptance angle  
860nm peak response  
TO-46 hermetic package  
large photosensitive area  
usable for visible through near-IR  
storage temperature........................................................................-55°C to +150°C  
operating temperature.....................................................................-55°C to +150°C  
lead soldering temperature(1) ..........................................................................260°C  
reverse voltage ...................................................................................................30V  
maximum continuous power dissipation(2).....................................................200mW  
notes:  
description  
1. 0.06” (1.5mm) from the header for 5 seconds maximum.  
2. Derate linearly 1.28mW/°C free air temperature to TA = +150°C.  
The CLD141 and CLD141R are  
0.051" x 0.051" active area silicon  
photodiodes featuring high linearity,  
low dark current and fast response.  
The TO-46 header provides thermal  
environment for reliable operation  
over a wide temperature range.  
For additional information, call  
Clairex.  
electrical characteristics (TA = 25°C unless otherwise noted)  
symbol parameter  
min  
typ  
max  
units test conditions  
ISC  
ID  
Short-circuit current(3)  
6.0  
-
-
VBIAS = 0V  
µA  
Dark current  
CLD141  
-
-
5.0  
nA  
VF = 100mV, Ee = 0  
CLD141R  
-
-
5.0  
nA  
V
pF  
µs  
deg.  
VR = 15mV, Ee = 0  
VO  
CJ  
tr, tf  
Open circuit voltage(3)  
Junction capacitance  
Output rise and fall time  
-
-
-
-
0.35  
-
40  
3.0  
-
-
-
70  
VBIAS = 0V, f = 1MHz  
RL = 1kΩ  
Total angle at half sensitivity points  
ΘHP  
notes: 3. Radiation source is a tungsten lamp at a color temperature of 2854K and Ee = 5mW/cm2 or equivalent.  
Revised 12/01/04  
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.  
Clairex Technologies, Inc.  
Phone: 972-265-4900  
1301 East Plano Parkway  
Fax: 972-265-4949  
Plano, Texas 75074-8524  
www.clairex.com  

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