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CLD160 PDF预览

CLD160

更新时间: 2024-10-01 06:47:59
品牌 Logo 应用领域
CLAIREX 光电二极管光电二极管
页数 文件大小 规格书
1页 93K
描述
Large Active Area Silicon Planar photodiode

CLD160 数据手册

  
®
Clairex  
CLD160  
Technologies, Inc.  
Large Active Area  
Silicon Planar photodiode  
July, 2001  
0.186 (4.72)  
0.164 (4.17)  
0.365 (9.27)  
0.355 (9.02)  
1.000 (25.4) min  
0.030 (0.76) nom  
0.200 (5.08)  
0.330 (8.38)  
0.320 (8.13)  
(short lead)  
CATHODE
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)  
Case 12  
absolute maximum ratings (TA = 25°C unless otherwise stated)  
features  
storage temperature.......................................................................-65°C to +150°C  
operating temperature................................................................... -65°C to +150°C  
lead soldering temperature(1) ......................................................................... 260°C  
reverse voltage ..................................................................................................30V  
continuous power dissipation(2) ...................................................................250mW  
100° acceptance angle  
860nm peak response  
hermetically sealed TO-5  
package  
usable for visible through near-IR  
RoHS compliant  
notes:  
1. 0.06” (1.5mm) from the header for 5 seconds maximum.  
2. Derate linearly 1.60mW/°C free air temperature to TA = +150°C.  
description  
The CLD160 is a 0.122" x 0.122"  
active area silicon photodiode  
mounted in a flat window TO-5  
package. Wide acceptance angle  
permits use in IR air communications  
ambient light detection, safety and  
monitoring, security systems, etc. For  
additional information, call Clairex.  
electrical characteristics (TA = 25°C unless otherwise noted)  
symbol  
parameter  
min  
typ  
max  
units test conditions  
Short-circuit current(3)  
Dark current  
VBIAS = 0V, Ee=5mW/cm2  
ISC  
ID  
VO  
VBR  
CJ  
-
-
-
25  
-
50  
-
0.35  
-
-
-
-
5.0  
-
µA  
nA  
V
VR = 15V, Ee = 0  
Ee = 5mW/cm2  
IR = 100µA  
VBIAS=0V, f = 1MHz  
RL = 1kΩ  
Open circuit voltage(3)  
Reverse breakdown  
-
V
Junction capacitance  
Output rise and fall time(4)  
Total angle at half sensitivity points  
200  
12  
-
pF  
µs  
deg.  
tr, tf  
-
-
100  
Θ
HP  
notes: 3. Radiation source is a frosted tungsten lamp with color temperature of 2854K or equivalent.  
4. Radiation source is an AlGaAs IRED operating at a peak emission wavelength of 880nm and Ee = 20mW/cm2.  
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.  
Revised 3/15/06  
Clairex Technologies, Inc.  
Phone: 972-265-4900  
1301 East Plano Parkway  
Fax: 972-265-4949  
Plano, Texas 75074-8524  
www.clairex.com  

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