CLD156

更新时间： 2024-12-01 06:47:59

品牌	Logo	应用领域
CLAIREX		光电二极管光电二极管
页数	文件大小	规格书
1页	94K
描述
Large Active Area Silicon Planar photodiode

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CLD156 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.61	Is Samacsys：	N
Base Number Matches：	1

CLD156 数据手册



This product is tested to satisfy the

conditions of both the CLD156 and

the CLD156R.

Clairex

CLD156

Technologies, Inc.

Large Active Area

Silicon Planar photodiode

May, 2001

0.186 (4.72)

0.164 (4.17)

0.365 (9.27)

0.355 (9.02)

1.000 (25.4) min

0.030 (0.76) nom

0.200 (5.08)

0.330 (8.38)

0.320 (8.13)

CATHODE (long lead)

ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)

Case 12

absolute maximum ratings (T_A= 25°C unless otherwise stated)

features

storage temperature........................................................................-65°C to +150°C

operating temperature.....................................................................-65°C to +150°C

lead soldering temperature⁽¹⁾.............................................................................260°

reverse voltage ...................................................................................................30V

continuous power dissipation⁽²⁾.....................................................................200mW

• 100° acceptance angle

• 860nm peak response

• TO-5 hermetic package

• usable for visible through near-IR

• RoHS compliant

notes:

description

1. 0.06” (1.5mm) from the header for 5 seconds maximum.

2. Derate linearly 1.28mW/°C free air temperature to T_A= +150°C.

The CLD156 and CLD156R are

0.122" x 0.222" active area silicon

photodiodes featuring high linearity

and low dark current. The TO-5

header provides thermal

environment for reliable operation

over a wide temperature range. Wide

acceptance angle permits use in IR

air communications, ambient light

detection, safety and monitoring,

security systems, etc. For additional

information, call Clairex.

electrical characteristics (T_A= 25°C unless otherwise noted)

symbol parameter

min

typ

max

units test conditions

Short-circuit current⁽³⁾

I_SC

I_D

100

0.35

V_BIAS= 0V, E_e= 5mW/cm²

µA

µs

V_F= 100mV, E_e= 0

V_R= 15V, E_e= 0

E_e= 5mW/cm²

I_R= 100µA

V_BIAS= 0V, f = 1MHz

R_L= 1kΩ

Dark current

V_O

V_BR

C_J

Open circuit voltage⁽³⁾

Reverse breakdown

Junction capacitance

400

t_r, t_f

Output rise and fall time⁽⁴⁾

Total angle at half sensitivity points

100

deg.

notes: 3. Radiation source is a frosted tungsten lamp at a color temperature of 2854K or equivalent.

4. Radiation source is an AlGaAs IRED operating at a peak emission wavelength of 880nm and E_e= 20mW/cm².

Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.

Revised 3/15/06

Clairex Technologies, Inc.

Phone: 972-265-4900

1301 East Plano Parkway

Fax: 972-265-4949

Plano, Texas 75074-8524

www.clairex.com

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