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CLD156

更新时间: 2024-10-01 06:47:59
品牌 Logo 应用领域
CLAIREX 光电二极管光电二极管
页数 文件大小 规格书
1页 94K
描述
Large Active Area Silicon Planar photodiode

CLD156 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.61Is Samacsys:N
Base Number Matches:1

CLD156 数据手册

  
®
This product is tested to satisfy the  
conditions of both the CLD156 and  
the CLD156R.  
Clairex  
CLD156  
Technologies, Inc.  
Large Active Area  
Silicon Planar photodiode  
May, 2001  
0.186 (4.72)  
0.164 (4.17)  
0.365 (9.27)  
0.355 (9.02)  
1.000 (25.4) min  
0.030 (0.76) nom  
0.200 (5.08)  
0.330 (8.38)  
0.320 (8.13)  
CATHODE (long lead)  
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)  
Case 12  
absolute maximum ratings (TA = 25°C unless otherwise stated)  
features  
storage temperature........................................................................-65°C to +150°C  
operating temperature.....................................................................-65°C to +150°C  
lead soldering temperature(1) .............................................................................260°  
reverse voltage ...................................................................................................30V  
continuous power dissipation(2) .....................................................................200mW  
100° acceptance angle  
860nm peak response  
TO-5 hermetic package  
usable for visible through near-IR  
RoHS compliant  
notes:  
description  
1. 0.06” (1.5mm) from the header for 5 seconds maximum.  
2. Derate linearly 1.28mW/°C free air temperature to TA = +150°C.  
The CLD156 and CLD156R are  
0.122" x 0.222" active area silicon  
photodiodes featuring high linearity  
and low dark current. The TO-5  
header provides thermal  
environment for reliable operation  
over a wide temperature range. Wide  
acceptance angle permits use in IR  
air communications, ambient light  
detection, safety and monitoring,  
security systems, etc. For additional  
information, call Clairex.  
electrical characteristics (TA = 25°C unless otherwise noted)  
symbol parameter  
min  
typ  
max  
units test conditions  
Short-circuit current(3)  
ISC  
ID  
-
-
-
-
25  
-
100  
-
-
0.35  
-
-
-
-
50  
50  
-
VBIAS = 0V, Ee = 5mW/cm2  
µA  
nA  
nA  
V
V
pF  
µs  
VF = 100mV, Ee = 0  
VR = 15V, Ee = 0  
Ee = 5mW/cm2  
IR = 100µA  
VBIAS = 0V, f = 1MHz  
RL = 1kΩ  
Dark current  
VO  
VBR  
CJ  
Open circuit voltage(3)  
Reverse breakdown  
-
Junction capacitance  
400  
10  
-
tr, tf  
Output rise and fall time(4)  
Total angle at half sensitivity points  
-
-
100  
deg.  
Θ
HP  
notes: 3. Radiation source is a frosted tungsten lamp at a color temperature of 2854K or equivalent.  
4. Radiation source is an AlGaAs IRED operating at a peak emission wavelength of 880nm and Ee = 20mW/cm2.  
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.  
Revised 3/15/06  
Clairex Technologies, Inc.  
Phone: 972-265-4900  
1301 East Plano Parkway  
Fax: 972-265-4949  
Plano, Texas 75074-8524  
www.clairex.com  

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