Datasheet > CLD171

CLD171

更新时间： 2024-10-01 06:47:59

品牌	Logo	应用领域
CLAIREX		光电二极管光电二极管
页数	文件大小	规格书
1页	97K
描述
Large Active Area Silicon Planar photodiode

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CLD171 数据手册



Clairex

This product is tested to satisfy the

conditions of both the CLD171 and

the CLD171R.

CLD171

Technologies, Inc.

Large Active Area

Silicon Planar photodiode

September, 2002

0.253 (6.43)

0.243 (6.17)

0.080 (2.03)

0.070 (1.78)

1.00 (25.4) min.

ANODE

0.288 (7.32)

0.278 (7.06)

0.200 (5.08)

CATHODE

0.065 (1.65) max

Anode lead is identified by red dot on side of substrate.

Case 13

ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)

absolute maximum ratings (T_A= 25°C unless otherwise stated)

features

storage temperature........................................................................-40°C to +125°C

operating temperature.....................................................................-40°C to +125°C

lead soldering temperature⁽¹⁾..........................................................................260°C

reverse voltage ...................................................................................................30V

continuous power dissipation⁽²⁾....................................................................200mW

• 130° acceptance angle

• 860nm peak response

• 125°C operating temperature

• usable for visible through near-IR

description

The CLD171 and CLD171R, are

0.122" x 0.122" active area silicon

photodiodes featuring high linearity

and low dark current. They are

epoxy encapsulated for lower cost

applications. Wide acceptance

angle permits use in IR air

notes:

1. 0.06” (1.5mm) from the header for 5 seconds maximum.

2. Derate linearly 1.6mW/°C free air temperature to T_A= +125°C.

If higher operating temperature is required, see the CLD160.

communications, ambient light

detection, safety and monitoring,

security systems, etc.

electrical characteristics (T_A= 25°C unless otherwise noted)

symbol parameter

min

typ

max

units test conditions

Short-circuit current⁽³⁾

I_SC

I_D

0.35

V_BIAs=0V, E_e= 5mW/cm²

V_F= 100mV, E_e= 0

µA

Dark current

5.0

200

µs

deg.

V_R= 15V, E_e= 0

E_e= 5mW/cm²

I_R= 100µA

V_BIAS= 0V, f = 1MHz

R_L= 1kΩ

Open circuit voltage⁽³⁾

V_O

V_BR

C_J

Reverse breakdown

Junction capacitance

t_r, t_f

Output rise and fall time⁽⁴⁾

Total angle at half sensitivity points

130

note: 3. Radiation source is a frosted tungsten lamp at a color temperature of 2854K or equivalent.

4. Radiation source is an AlGaAs IRED operating at a peak emission wavelength of 880nm and E_e= 20mW/cm².

Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.

Revised 3/15/06

Clairex Technologies, Inc.

Phone: 972-265-4900

1301 East Plano Parkway

Fax: 972-265-4949

Plano, Texas 75074-8524

www.clairex.com

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