Datasheet > CLD370F

CLD370F

更新时间： 2024-10-01 06:47:59

品牌	Logo	应用领域
其他 - ETC		光电二极管光电二极管
页数	文件大小	规格书
1页	91K
描述
Plastic PIN Photodiode

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CLD370F 数据手册



CLD370F

Clairex

Technologies, Inc.

Plastic PIN Photodiode

December, 2001

0.310 (7.87)

0.290 (7.37)

0.040 (1.02)

0.23 (5.9)

0.06 (1.5) max.

See Note 3

ANODE

0.20 (5.05)

0.100 (2.54) nom.

CATHODE

0.020 (0.50) sq. nom.

1.0 (25.4) min.

ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)

All dimensions are in inches (mm).

features

absolute maximum ratings (T_A= 25°C unless otherwise stated)

• fast switching speed

storage temperature……………………………………………………-40°C to +125°C

operating temperature………………………………………………… -40°C to +100°C

lead soldering temperature⁽¹⁾………………………………………………………260°C

continuous power dissipation⁽²⁾…………………………………………………150mW

• low junction capacitance

• 850 nm peak response

• large photosensitive area

• sharp cutoff to visible wavelengths

• ± 30° acceptance angle

notes:

1. 0.06” (1.5mm) from the header for 5 seconds maximum

2. Derate linearly 1.6mW/°C from 25°C free air temperature to T_A= +100°C.

3. Protruding resin under flange is 0.06" (1.5mm) max.

description

The CLD370F is a high gain silicon

photodiode mounted in a T-1¾ (5mm)

dark plastic package. The chip has an

active area of approximately 0.080"

x 0.080" (4 square mm) and

is intended for use as an infrared

sensor. The dark tinting of the

package effectively attenuates

wavelengths shorter than 700nm

eliminating most visible light

interference.

electrical characteristics (TA = 25°C unless otherwise noted)

symbol

parameter

min

typ

max

units

test conditions

5.0

10.0

60.0

µA

V_R= 5V, E_e= 0.1mW/cm²

V_R= 5V, E_e= 1.0mW/cm²

I_SC

Short-circuit current⁽¹⁾

I_D

V_BR

C_J

Dark current

V_R= 10V, E_e= 0

Reverse breakdown

I_R= 100µA, E_e= 0

V_R= 3V, E_e= 0. f = 1MHz

E_e= 0.1mW/cm²

Junction capacitance

Open circuit voltage

350

V_O

deg.

Total angle at half sensitivity points

Output rise and fall time⁽¹⁾

t_r, t_f

Note:

R_L= 1kΩ, V_R= 10V

1. Radiation source is an aluminum gallium arsenide IRED operating at a peak wavelength of 850nm.

Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.

Revised 3/15/06

Clairex Technologies, Inc.

Phone: 972-265-4900

1301 East Plano Parkway

Fax: 972-265 4949

Plano, Texas 75074-8524

www.clairex.com

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