Datasheet > CL65R360C

CL65R360C

更新时间： 2024-09-16 15:18:35

品牌	Logo	应用领域
晶导 - JINGDAO		/
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8页	569K
描述
TO-252

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CL65R360C 数据手册

深圳市晶导电子有限公司

ShenZhen Jingdao Electronic Co.,Ltd.

www.jdsemi.cn

CL65R360C

CL65R360F

650V N-Channel Super Junction MOSFET

Features

Key Parameters



Very Low FOM (R_DS(on)× Q_g)

Extremely low switching loss

Excellent stability and uniformity

100% Avalanche Tested

Parameter

BV_DSS@T_j,max

I_D

Value

700

Unit

R_DSON,max

Qg_,,Typ

0.36

Built-in ESD Diode

Applications

Package & Internal Circuit

TO-252

SYMBOL



Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Power Factor Correction (PFC)

TV power & LED Lighting Power

AC to DC Converters

Telecom

Absolute Maximum Ratings

Symbol

T_C=25℃ unless otherwise specified

Parameter

Value

650

Unit

V_DSS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±30

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

I_D

6.9

I_DM

E_AS

Single Pulsed Avalanche Energy

151

I_AR

Avalanche Current

1.75

dv/dt

P_D

MOSFET dv/dt ruggedness, V_DS=0…400V

Reverse diode dv/dt, V_DS=0…400V, IDS≤ID

Power Dissipation (T_C= 25℃)

V/ns

V_ESD(G-S)

T_j，T_stg

Gate source ESD(HBM-C=100pF, R=1.5KΩ)

Operating and Storage Temperature Range

2500

-55 to +150

℃

Thermal Resistance Characteristics

Symbol

R_θJC

Parameter

Value

1.37

Unit

℃/W

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient , Max.

R_θJA

地址：深圳市宝安区石岩街道洲石路中集创谷产业园 B 栋 1-3 层

电话：0755-29799516 传真：0755-29799515

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