Datasheet > CL65R550C

CL65R550C

更新时间： 2024-11-13 15:18:55

品牌	Logo	应用领域
晶导 - JINGDAO		/
页数	文件大小	规格书
8页	603K
描述
TO-252

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数据手册

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CL65R550C 数据手册

深圳市晶导电子有限公司

ShenZhen Jingdao Electronic Co.,Ltd.

www.jdsemi.cn

CL65R550C

650V N-Channel Super Junction MOSFET

Features



Very Low FOM (R_DS(on)× Q_g)

Extremely low switching loss

Excellent stability and uniformity

100% Avalanche Tested

ITEM

BV_DSS

I_D

Value

650

Unit

R_DSON(MAX)

Qg_,,Typ

0.55

13.3

Built-in ESD Diode

Package & Internal Circuit

Applications

TO-252

SYMBOL



Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Power Factor Correction (PFC)

AC to DC Converters

Telecom

Absolute Maximum Ratings

Symbol

T_C=25℃ unless otherwise specified

Parameter

Value

Unit

V_DSS

V_GS

Drain-Source Voltage

Gate-Source Voltage

650

±30

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

5.6

I_D

I_DM

E_AS

Single Pulsed Avalanche Energy

125

I_AR

Avalanche Current

1.2

dv/dt

P_D

MOSFET dv/dt ruggedness, V_DS=0…400V

Reverse diode dv/dt, V_DS=0…400V, IDS≤ID

Power Dissipation (T_C= 25℃)

V/ns

V_ESD(G-S)

T_j，T_stg

Gate source ESD(HBM-C=100pF, R=1.5KΩ)

Operating and Storage Temperature Range

2000

-55 to +150

℃

Thermal Resistance Characteristics

Symbol

R_θJC

Parameter

Value

1.98

Unit

℃/W

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient , Max.

R_θJA

62.5

地址：深圳市宝安区石岩街道洲石路中集创谷产业园 B 栋 1-3 层

电话：0755-29799516 传真：0755-29799515

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