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CL3P65764-45 PDF预览

CL3P65764-45

更新时间: 2024-09-17 20:58:23
品牌 Logo 应用领域
TEMIC 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
7页 98K
描述
Cache SRAM, 8KX8, 45ns, CMOS, PDIP28,

CL3P65764-45 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.92
最长访问时间:45 nsI/O 类型:COMMON
JESD-30 代码:R-PDIP-T28JESD-609代码:e0
内存密度:65536 bit内存集成电路类型:CACHE SRAM
内存宽度:8功能数量:1
端口数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8KX8
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP28,.3封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified最大待机电流:0.005 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.06 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CL3P65764-45 数据手册

 浏览型号CL3P65764-45的Datasheet PDF文件第2页浏览型号CL3P65764-45的Datasheet PDF文件第3页浏览型号CL3P65764-45的Datasheet PDF文件第4页浏览型号CL3P65764-45的Datasheet PDF文件第5页浏览型号CL3P65764-45的Datasheet PDF文件第6页浏览型号CL3P65764-45的Datasheet PDF文件第7页 
MATRA MHS  
L 65764  
8 K × 8 / 3.3 Volts High Speed CMOS SRAM  
Description  
The L 65764 is a high speed CMOS static RAM organized Easy memory expansion is provided by active low chip  
as 8192 × 8 bits. It is manufactured using MHS high select (CS1), an active high chip select (CS2), an active  
performance CMOS technology.  
low output enable (OE) and three state drivers.  
Access times as fast as 25 ns are available with maximum  
power consumption of only 216 mW.  
L 65764 provides fast access time with 3,3 volts power  
supply, perfectly designed for portable applications (PC  
cache memory... etc).  
The L 65764 features fully static operation requiring no  
external clocks or timing strobes. The automatic  
power-down feature reduces the power consumption by  
73 % when the circuit is deselected.  
Features  
D Single supply 3.3 V ± 0.3 V  
D Fast access time  
D 300 and 600 mils width package  
D Asynchronous  
Commercial : 25/35/45/55 ns (max)  
D Low power consumption  
Active : 216 mW (typ)  
D Capable of withstanding greater than 2000 V electrostatic  
discharge  
Standby : 36 mW (typ)  
Interface  
Block Diagram  
Rev. C (22/12/94)  
1

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