CHV2270
Fully Integrated Ku-band HBT VCO
Low cost / High linearity
GaAs Monolithic Microwave IC
GLIN
+V
SETHP
Description
The CHV2270 is a multifunction for frequency
generation. It integrates a C-band balanced
voltage controlled oscillator providing a Ku-
band output (2nd harmonic), with different
modulation slopes control and other functions
like linearity improvement device making it
suitable for radar modulations. It also includes a
dual rank prescaler, an adjustable medium
power amplifier and a temperature sensor.
The VCO is fully integrated on HBT process.
On chip base-collector diodes are used as
varactors. All the active devices are internally
self biased to ease bias configuration. This chip
is compatible with automatic equipment for
assembly.
6.375GHz
Vmt
RF_OUT
x2
Vft
Vct
12.75GHz
÷N
SETN
VCO HBT
PresN_OUT
Vtemp
VCO multifunction block diagram
The circuit is manufactured on HBT process
2µm emitter length, via holes through the
substrate and high Q passive elements.
It is available in chip form.
Main Features
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-40°C to +125°C temperature range
Low temperature dependence
Fully integrated VCO architecture
Prescaler by up to F_out/128
Low phase noise
Low cost / high linearity oriented
Adjustable output power
Temperature sensor
Very simple bias configuration
Low DC power consumption
Automatic assembly oriented
SiNx layer protection
Typical VCO F_out(Vct) tuning (GHz)
12,8
12,75
12,7
12,65
12,6
Chip size: 1.38 x 2.05 x 0.1mm
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
Typical free running VCO F_out(Vmt) tuning
Main Characteristics
Tamb = +25°C
Symbol
F_out
PN
Parameter
Min
Typ
12.75
-100
Max
Unit
GHz
Specified output frequency range
Phase noise @ F_out and 100kHz offset
Output power
12.65
12.85
dBc/Hz
dBm
Pout
5 or 14
Ref.: DSCHV22707117 -27 Apr 07
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09