Datasheet > CHV2411A_0709

CHV2411A_0709

更新时间： 2024-11-07 03:25:31

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
10页	1541K
描述
Fully Integrated HBT K-band VCO

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中文翻译

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数据手册

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CHV2411A_0709 数据手册

CHV2411aQDG

RoHS COMPLIANT

Fully Integrated HBT K-band VCO

GaAs Monolithic Microwave IC

In QFN package

Description

The CHV2411a-QDG is

monolithic

multifunction for frequency generation. It

integrates a X-band “push-push” oscillator with

frequency control (VCO) thanks to base-

collector diodes, used as varactors, a K-band

buffer amplifiers and a divider by 8. The VCO is

fully integrated on HBT process. All the active

devices are internally self biased.

The circuit is fully integrated on InGaP HBT

process: 2µm emitter length, via holes through

the substrate and high Q passive elements.

The chip is delivered in a 24 Leads RoHS

compliant QFN4x4 package.

Main Features

ꢀ

K-band VCO+K-band buffers+Prescalar/8

Fully integrated VCO (no need for external

Resonator

ꢀ

Low phase noise

High temperature range

High frequency stability

On chip self biased devices

Standard SMD package : 24L-QFN4x4

Main Characteristics

Symbol

Parameter

Min

Typ

24.125

F_out/2

F_out/16

Max

Unit

GHz

F_out

F_vco

IF_out

Pout

PFI

Specified output frequency range

Oscillator frequency

24.25

GHz

Output Intermediate frequency

Output power at F_out

GHz

-3

dBm

Output power at Intermediate frequency (IF)

SSB Phase Noise @ F_out @ 100 kHz

dBm

-90

-80

dBc/Hz

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

Ref. : DSCHV2411aQDG7254 - 11 Sept 07

1/10

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

12 3 4 5 6 7...10

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