Datasheet > CHK015A-SMA

CHK015A-SMA

更新时间： 2024-11-12 12:53:07

品牌	Logo	应用领域
UMS		晶体晶体管
页数	文件大小	规格书
12页	410K
描述
15W Power Packaged Transistor

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CHK015A-SMA 数据手册

CHK015A-SMA

15W Power Packaged Transistor

GaN HEMT on SiC

Description

The CHK015A-SMA is an unmatched

packaged Gallium Nitride High Electron

Mobility Transistor. It offers general purpose

and broadband solutions for a variety of RF

power applications. It is well suited for multi-

purpose applications such as radar and

telecommunication

The CHK015A-SMA is developed on a

0.5µm gate length GaN HEMT process. It

requires an external matching circuitry.

The CHK015A-SMA is available in

ceramic-metal flange power package

providing low parasitic and low thermal

resistance.

V_DS= 50V, I_{D_Q}= 100mA, Freq = 5.6GHz

CW mode

Main Features

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

■ Wide band capability: up to 6GHz

■ Pulsed and CW operating modes

■ High power: > 15W

PAE

Pout

■ High Efficiency: up to 70%

■ DC bias: V_DS= 50V @ I_{D_Q}= 100mA

■ MTTF > 10⁶hours @ Tj = 200°C

■ RoHS Flange Ceramic package

Gain

10 12 14 16 18 20 22 24 26 28 30 32 34

Input Power (dBm)

Intrinsic performances of the packaged device

Main Electrical Characteristics

Tcase= +25°C, CW mode, F = 5.6GHz, V_DS=50V, I_{D_Q}=100mA

Symbol

G_SS

Parameter

Small Signal Gain

Min

Typ

Max

Unit

P_SAT

Saturated Output Power

Max Power Added Efficiency

PAE

G_{PAE_MAX}Associated Gain at Max PAE

Ref. : DSCHK015ASMA3021 - 21 Jan 13

1/12

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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