Datasheet > CHK025A-SOA26

CHK025A-SOA26

更新时间： 2024-11-12 12:30:47

品牌	Logo	应用领域
UMS		晶体晶体管
页数	文件大小	规格书
14页	581K
描述
25W Power Packaged Transistor

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CHK025A-SOA26 数据手册

CHK025A-SOA

25W Power Packaged Transistor

GaN HEMT on SiC

Description

The CHK025A-SOA is an unmatched

packaged Gallium Nitride High Electron

Mobility Transistor. It offers general purpose

and broadband solutions for a variety of RF

power applications. It is well suited for multi-

purpose applications such as radar and

telecommunication.

The CHK025A-SOA is developed on a 0.5µm

gate length GaN HEMT process. It requires

an external matching circuitry.

The CHK025A-SOA is available as a

ceramic-metal

flange

power

package

providing low parasitic and low thermal

resistance.

V_DS= 50V, I_{D_Q}= 200mA, Freq=4GHz

Pulsed mode

Main Features

■ Wide band capability: up to 5GHz

■ Pulsed and CW operating modes

■ High power: > 25W

PAE

Pout

■ High Efficiency: up to 70%

■ DC bias: V_DS=50V @ I_{D_Q}=200mA

■ MTTF > 10⁶hours @ Tj=200°C

■ RoHS Flange Ceramic package

Gain

Intrinsic performances of the packaged device

Main Electrical Characteristics

Tcase= +25°C, Pulsed mode, F = 4GHz, V_DS=50V, I_{D_Q}=200mA

Symbol

G_SS

Parameter

Small Signal Gain

Min

Typ

Max

Unit

P_SAT

Saturated Output Power

PAE

Max Power Added Efficiency

G_{PAE_MAX}Associated Gain at Max PAE

Ref. : DSCHK025ASOA3021 - 21 Jan 13

1/14

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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