Datasheet > CHK040A-SOA26

CHK040A-SOA26

更新时间： 2024-09-24 12:30:47

品牌	Logo	应用领域
UMS		晶体晶体管
页数	文件大小	规格书
14页	405K
描述
40W Power Packaged Transistor

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CHK040A-SOA26 数据手册

CHK040A-SOA

40W Power Packaged Transistor

GaN HEMT on SiC

Description

The CHK040A-SOA is an unmatched

packaged Gallium Nitride High Electron

Mobility Transistor. It offers general purpose

and broadband solutions for a variety of RF

power applications. It is well suited for multi-

purpose applications such as radar and

telecommunication

The CHK040A-SOA is developed on a 0.5µm

gate length GaN HEMT process. It requires

an external matching circuitry.

The CHK040A-SOA is available in a ceramic-

metal flange power package providing low

parasitic and low thermal resistance.

V_DS= 50V, I_{D_Q}= 300mA, Freq=3GHz

Pulsed mode

Main Features

3.3

■ Wide band capability: up to 3.5GHz

■ Pulsed and CW operating modes

■ High power: > 45W

Pulsed Mode at 3GHz

PAE

2.7

2.4

2.1

1.8

1.5

1.2

0.9

0.6

0.3

Pout

■ High Efficiency: up to 70%

■ DC bias: V_DS=50V @ I_{D_Q}=300mA

■ MTTF > 10⁶hours @ Tj=200°C

■ RoHS Flange Ceramic package

Gain

12 14 16 18 20 22 24 26 28 30 32 34 36 38

Input Power (dBm)

Intrinsic performances of the packaged device

Main Electrical Characteristics

Tcase= +25°C, Pulsed mode, F = 3GHz, V_DS=50V, I_{D_Q}=300mA

Symbol

G_SS

Parameter

Small Signal Gain

Min

Typ

Max

Unit

P_SAT

Saturated Output Power

PAE

Max Power Added Efficiency

G_{PAE_MAX}Associated Gain at Max PAE

Ref. : DSCHK040ASOA3021 - 21 Jan 13

1/14

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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