Datasheet > CHK080A-SRA

CHK080A-SRA

更新时间： 2024-11-12 12:53:07

品牌	Logo	应用领域
UMS		晶体晶体管
页数	文件大小	规格书
14页	577K
描述
80W Power Packaged Transistor

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CHK080A-SRA 数据手册

CHK080A-SRA

80W Power Packaged Transistor

GaN HEMT on SiC

Description

The CHK080A-SRA is an unmatched

Packaged Gallium Nitride High Electron

Mobility Transistor. It offers general purpose

and broadband solutions for a variety of RF

power applications. It is well suited for multi-

purpose applications such as radar and

telecommunication.

The CHK080A-SRA is developed on a 0.5µm

gate length GaN HEMT process. It requires

an external matching circuitry.

The CHK080A-SRA is available in

ceramic-metal flange power package

providing low parasitic and low thermal

resistance.

V_DS= 50V, I_{D_Q}= 600mA, Freq=3GHz

Pulsed mode

Main Features

■ Wide band capability: up to 3.5GHz

■ Pulsed and CW operating modes

■ High power : > 80W

6.5

Pulsed mode at 3GHz

PAE

5.5

Pout

4.5

■ High Efficiency : up to 70%

■ DC bias: V_DS=50V @ I_{D_Q}=600mA

■ MTTF > 10⁶hours @ Tj=200°C

■ RoHS Flange Ceramic package

3.5

2.5

1.5

Gain

0.5

10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40

InputPower (dBm)

Intrinsic performances of the package device

Main Electrical Characteristics

Tcase= +25°C, Pulsed mode, F=3GHz, V_DS=50V, I_{D_Q}=600mA (I_{D_Q}=300mA on each transistor)

Symbol

G_SS

Parameter

Small Signal Gain

Min

Typ

Max

Unit

P_SAT

Saturated Output Power

100

PAE

Max Power Added Efficiency

G_{PAE_MAX}Associated Gain at Max PAE

Ref. : DSCHK080A-SRA3148 - 28 Jun 13

1/14

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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