Datasheet > CHA2395

CHA2395

更新时间： 2022-11-29 02:43:14

品牌	Logo	应用领域
UMS		放大器
页数	文件大小	规格书
6页	90K
描述
36-40GHz Low Noise Very High Gain Amplifier

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CHA2395 数据手册

CHA2395

36-40GHz Low Noise Very High Gain Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2395 is a four-stage monolithic low

noise amplifier. It is designed for a wide

range of applications, from military to

commercial communication systems.

The circuit is manufactured with a HEMT

process : 0.25µm gate length, via holes

through the substrate, air bridges and

electron beam gate lithography.

Out

It is available in chip form.

Vg 1,2

Vg 3,4

Typical on wafer measurements :

Main Features

■ Broadband performances

■ 3.0dB Noise Figure

■ 30dB gain

■ ±1.0dB gain flatness

■ Low DC power consumption,

90mA@3.5V

■ Chip size : 2.07 X 1.11 X 0.10 mm

30 31 32 33 34 35 36 37 38 39 40

Frequency (GHz)

Main Characteristics

Tamb. = 25°C

Symbol

Fop

Parameter

Operating frequency range

Small signal gain

Min

Typ

Max

Unit

GHz

P1dB

Output power at 1dB gain compression

Noise figure

dBm

3.0

4.0

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

Ref. : DSCHA23952240 -28-Aug.-02

1/6

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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