Datasheet > CHA2411-QDG

CHA2411-QDG

更新时间： 2024-09-23 03:25:27

品牌	Logo	应用领域
UMS		微波
页数	文件大小	规格书
10页	684K
描述
GaAs Monolithic Microwave IC In QFN package

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中文翻译

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数据手册

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CHA2411-QDG 数据手册

CHA2411-QDG

RoHS COMPLIANT

20-25GHz LNA

GaAs Monolithic Microwave IC

In QFN package

Description

The CHA2411 is a monolithic Low

noise Amplifier in K band providing 26 dB gain

from a single bias supply +5V with a noise

figure of 2.5 dB. All the active devices are self

biased on chip.

The circuit is manufactured with a

standard GaAs PHEMT process: 0.25µm gate

length, via holes through the substrate, air

bridges and electron beam gate lithography.

Functional diagram

The chip is delivered in a 24 Leads

RoHS compliant QFN4x4 package.

•

Main Features

Excellent noise figure : 2.5 dB

Stable gain vs temperature 26 ± 2dB

Single supply : +5V

Devices self biased on chip

Standard SMD package : QFN 24L 4x4

Plastic Package

Main Characteristics in QFN package

Tamb = +25°C

Parameters

Frequency range

Min

Typ

Max

Unit

GHz

Small signal Gain

2.5

SSB Noise figure

Input / Output Return Loss

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

Ref. : DSCHA2411QDG6174 - 23 Jun 06

1/10

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

12 3 4 5 6 7...10

中文翻译

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