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CHA2292_07 PDF预览

CHA2292_07

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
UMS 放大器
页数 文件大小 规格书
7页 221K
描述
16-24GHz Low Noise, Variable Gain Amplifier

CHA2292_07 数据手册

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CHA2292  
RoHS COMPLIANT  
16-24GHz Low Noise, Variable Gain Amplifier  
GaAs Monolithic Microwave IC  
Description  
The CHA2292 is a high gain four-stage  
monolithic low noise amplifier with variable gain.  
It is designed for a wide range of applications,  
from military to commercial communication  
systems.The backside of the chip is both RF and  
DC grounded. This helps simplify the assembly  
process.  
The circuit is manufactured with a PM-HEMT  
process, 0.25µm gate length, via holes through  
the substrate, air bridges and electron beam  
gate lithography.  
It is available in chip form.  
Typical on wafer measurements :Gain & NF  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
Main Features  
Gain (dB)  
Frequency range: 17-24GHz  
2.8dB Noise Figure.  
25dB gain  
Gain control range: 15dB  
DC power consumption: 160mA @ 5V  
Chip size: 2.32 X 1.23 X 0.10 mm  
6
NF (dB)  
4
2
0
16  
17  
18  
19  
20  
21  
22  
23  
24  
Frequency (GHz)  
Main Characteristics  
Tamb. = 25°  
Parameter  
Min  
Typ  
Max  
Unit  
Fop  
G
Operating frequency range  
16  
24  
24  
GHz  
dB  
Small signal gain  
Noise figure  
26  
NF  
2.8  
3.5  
dB  
Gctrl  
Id  
Gain control range with Vc variation  
Bias current  
15  
20  
dB  
160  
mA  
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !  
Ref. : DSCHA22927150 - 20 May 07  
1/7  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  

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