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CHA2295-99F/00 PDF预览

CHA2295-99F/00

更新时间: 2022-11-26 07:43:31
品牌 Logo 应用领域
UMS 缓冲放大器
页数 文件大小 规格书
7页 117K
描述
6 - 11GHz Buffer Splitter Amplifier

CHA2295-99F/00 数据手册

 浏览型号CHA2295-99F/00的Datasheet PDF文件第2页浏览型号CHA2295-99F/00的Datasheet PDF文件第3页浏览型号CHA2295-99F/00的Datasheet PDF文件第4页浏览型号CHA2295-99F/00的Datasheet PDF文件第5页浏览型号CHA2295-99F/00的Datasheet PDF文件第6页浏览型号CHA2295-99F/00的Datasheet PDF文件第7页 
CHA2295  
6 - 11GHz Buffer Splitter Amplifier  
GaAs Monolithic Microwave IC  
Description  
OUT 1  
The CHA2295 is a broadband buffer splitter  
three-stage monolithic amplifier.  
It is designed for a wide range of applications,  
from military to commercial communication  
systems. The backside of the chip is both RF  
and DC grounds. This helps simplify the  
assembly process.  
Vd  
Vg  
IN  
The circuit is manufactured with a PM-HEMT  
process, 0.25µm gate length, via holes through  
the substrate, air bridges and electron beam  
gate lithography.  
It is available in chip form.  
OUT 2  
Typical on wafer measurements : Gain (dB)  
20  
Main Features  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
Broadband performance : 6 -11GHz  
14dBm saturated output power.  
18dB ±1.5dB gain flatness  
Good broadband matching  
Low DC power consumption, 160mA @ 3.5V  
Chip size : 2.26 X 1.33 X 0.10 mm  
Gain channel 1  
Gain channel 2  
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18  
Frequency (GHz)  
Main Characteristics  
Tamb. = 25°C  
Symbol  
Fop  
Parameter  
Operating frequency range  
Small signal gain  
Min  
6
Typ  
Max  
Unit  
GHz  
dB  
11  
G
15  
18  
14  
Psat  
Saturated Output power  
12  
dBm  
mA  
Id_small signal Bias current  
160  
220  
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !  
Ref. : DSCHA22952240 28-Aug.-02  
1/7  
Specifications subject to change without notice  
United Monolithic Semiconductors S.A.S.  
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France  
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  

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