Datasheet > CHA2296-99F/00

CHA2296-99F/00

更新时间： 2024-09-22 22:25:55

品牌	Logo	应用领域
UMS		缓冲放大器
页数	文件大小	规格书
7页	114K
描述
9- 19GHz Buffer Splitter Amplifier

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CHA2296-99F/00 数据手册

CHA2296

9- 19GHz Buffer Splitter Amplifier

GaAs Monolithic Microwave IC

Description

OUT 1

The CHA2296 is a broadband buffer splitter

three-stage monolithic amplifier.

It is designed for a wide range of applications,

from military to commercial communication

systems. The backside of the chip is both RF

and DC grounds. This helps simplify the

assembly process.

The circuit is manufactured with a PM-HEMT

process, 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

OUT 2

Typical on wafer measurements : Gain (dB)

Main Features

■ Broadband performance : 9-19GHz

■ 14dBm saturated output power.

■ 16dB ±1.5dB gain

■ Very good broadband matching

■ Low DC power consumption, 190mA @ 3.5V

■ Chip size : 2.26 X 1.33 X 0.10 mm

Gain channel 1

Gain channel 2

10 11 12 13 14 15 16 17 18 19 20 21 22

Frequency (GHz)

Main Characteristics

Tamb. = 25°C

Symbol

Fop

Parameter

Operating frequency range

Small signal gain

Min

Typ

Max

Unit

GHz

Psat

Saturated Output power

dBm

Id_small signal Bias current

190

250

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

Ref. :DSCHA22962044 13-Feb.-02

1/7

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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