Datasheet > CHA2293-99F/00

CHA2293-99F/00

更新时间： 2024-02-15 07:38:57

品牌	Logo	应用领域
UMS		放大器
页数	文件大小	规格书
7页	163K
描述
24.5-29.5GHz Low Noise, Variable Gain Amplifier

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CHA2293-99F/00 数据手册

CHA2293

24.5-29.5GHz Low Noise, Variable Gain Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2293 is a high gain

four-stage

monolithic low noise amplifier with variable gain.

It is designed for a wide range of applications,

from military to commercial communication

systems.The backside of the chip is both RF and

DC grounded. This helps simplify the assembly

process.

The circuit is manufactured with a PM-HEMT

process, 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

Vg1

It is available in chip form.

Typical on wafer measurements :Gain & NF

Main Features

Gain (dB)

•

Frequency range : 24.5-29.5GHz

3dB Noise Figure.

24dB gain

Gain control range: 15dB

Low DC power consumption, 160mA @ 5V

Chip size : 2.32 X 1.23 X 0.10 mm

NF (dB)

Frequency (GHz)

Main Characteristics

Tamb. = 25°C

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

24.5

29.5

GHz

Small signal gain

Noise figure

3.5

Gctrl

Gain control range with Vc variation

Bias current

150

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

Ref. : DSCHA22931201 -20-July-01

1/7

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

12 3 4 5 6 7

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