Datasheet > CGH35060F2-AMP

CGH35060F2-AMP

更新时间： 2024-11-14 01:19:07

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
11页	1493K
描述
60 W, 3100-3500 MHz, 28V, GaN HEMT

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CGH35060F2-AMP 数据手册

CGH35060F2 / CGH35060P2

60 W, 3100-3500 MHz, 28V, GaN HEMT

Cree’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor

(HEMT) designed speciﬁcally for high efﬁciency, high gain and wide bandwidth

capabilities, which makes the CGH35060F2 / P2 ideal for 3.1-3.5 GHz S-band pulsed

ampliﬁer applications. The transistor is supplied in a ceramic/metal ﬂange and pill

package.

Typical Performance Over 3.1-3.5 GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

3.1 GHz

3.3 GHz

3.5 GHz

Units

Small Signal Gain

12.0

13.2

11.5

_{OUT @}P_IN= 36.5 dBm

47.0

10.4

55.0

-7.3

47.6

11.06

62.0

46.7

10.1

62.0

-4.3

dBm

Drain Efﬁciency @ P_IN= 36.5 dBm

Input Return Loss

-17.0

Note:

Measured in the CGH35060F2-AMP1 ampliﬁer circuit, under 100 µsec Pulse Width, 20% Duty Cycle and 28 V.

Features

•

3.1 - 3.5 GHz Operation

60 W Peak Power Capability

12 dB Small Signal Gain

60 % Drain Efﬁciency

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...11

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