CGH35060P1 PDF预览

CGH35060P1

更新时间: 2025-07-21 15:19:03
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MACOM /
页数 文件大小 规格书
11页 1208K
描述
60 W; 3300 - 3600 MHz; 28 V; GaN HEMT for WiMAX

CGH35060P1 数据手册

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CGH35060F2/P2  
60 W, 3.1 - 3.5 GHz, 28 V, GaN HEMT  
Description  
The CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility  
transistor (HEMT) designed specifically for high efficiency, high gain and  
wide bandwidth capabilities, which makes the CGH35060F2/P2 ideal for 3.1  
- 3.5 GHz S-band pulsed amplifier applications. The transistor is supplied in  
a ceramic/metal flange and pill package.  
Package Types: 440193 & 440206  
PNs: CGH35060F2 & CGH35060P2  
Typical Performance Over 3.1-3.5 GHz (TC = 25ºC) of Demonstration Amplifier  
Parameter  
3.1 GHz  
12.0  
3.3 GHz  
13.2  
3.5 GHz  
11.5  
Units  
dB  
Small Signal Gain  
POUT @ PIN = 36.5 dBm  
Gain @ PIN = 36.5 dBm  
Drain Efficiency @ PIN = 36.5 dBm  
Input Return Loss  
47.0  
47.6  
46.7  
dBm  
dB  
10.4  
11.06  
62.0  
10.1  
55.0  
62.0  
%
-7.3  
-17.0  
-4.3  
dB  
Note:  
Measured in the CGH35060F2-AMP amplifier circuit, under 100μs Pulse Width, 20% Duty Cycle and 28 V.  
Features  
3.1 - 3.5 GHz Operation  
60 W Peak Power Capability  
12 dB Small Signal Gain  
60% Drain Efficiency  
Large Signal Models Available for ADS and MWO  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
Rev. 4.4, 2022-10-28  
For further information and support please visit:  
https://www.macom.com/support  

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