型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CGH351T500V2C7NN | CDE |
获取价格 |
CAP,AL2O3,350UF,500VDC,10% -TOL,50% +TOL | |
CGH351T500V2C7PV | CDE |
获取价格 |
CAP,AL2O3,350UF,500VDC,10% -TOL,50% +TOL | |
CGH35240 | MACOM |
获取价格 |
240 W; 3100 - 3500 MHz; 50 - ohm Input/Output - Matched; GaN HEMT for S - Band Radar Syste | |
CGH35240F | CREE |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Elec | |
CGH35240F-AMP | CREE |
获取价格 |
240 W, 3100-3500 MHz, 50-ohm Input/ | |
CGH35240F-TB | CREE |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Elec | |
CGH362T450X4L | CDE |
获取价格 |
Inverter Grade Screw Terminal Aluminum Electr | |
CGH362T450X4L0NN | CDE |
获取价格 |
CAP,AL2O3,3.6MF,450VDC,10% -TOL,50% +TOL | |
CGH362T450X4L0PF | CDE |
获取价格 |
CAP,AL2O3,3.6MF,450VDC,10% -TOL,50% +TOL | |
CGH362T450X4L0PH | CDE |
获取价格 |
CAP,AL2O3,3.6MF,450VDC,10% -TOL,50% +TOL |