Datasheet > CGH35240F-AMP

CGH35240F-AMP

更新时间： 2024-09-26 01:24:11

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
12页	1557K
描述
240 W, 3100-3500 MHz, 50-ohm Input/

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CGH35240F-AMP 数据手册

CGH35240F

240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT)

designed speciﬁcally with high efﬁciency, high gain and wide bandwidth capabilities,

which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar ampliﬁer applications.

The transistor is supplied in a ceramic/metal ﬂange package.

Typical Performance Over 3.1-3.5GHz ^(T_C^{= 25˚C)}of Demonstration Ampliﬁer

Parameter

3.1 GHz

3.2 GHz

3.3 GHz

3.4 GHz

3.5 GHz

Units

Output Power

250

240

225

220

Gain

12.1

11.9

11.6

11.5

11.4

Power Added Efﬁciency

Note:

Measured in the CGH35240F-AMP ampliﬁer circuit, under 300 μs pulse width, 20% duty cycle, P_IN= 42 dBm.

Features

•

3.1 - 3.5 GHz Operation

240 W Typical Output Power

11.6 dB Power Gain at P_IN= 42.0 dBm

57 % Typical Power Added Efﬁciency

50 Ohm Internally Matched

<0.2 dB Pulsed Amplitude Droop

Subject to change without notice.

www.cree.com/wireless

12 3 4 5 6 7...12

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