Datasheet > CEU50N06

CEU50N06

更新时间： 2024-02-28 16:18:33

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	381K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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CEU50N06 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84

CEU50N06 数据手册

CED50N06/CEU50N06

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

60V, 36A , R_DS(ON)= 18mΩ(typ) @V_GS= 10V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-251 & TO-252 package.

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

105

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

P_D

0.45

-55 to 175

W/ C

Operating and Store Temperature Range

TJ,Tstg

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

2.2

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

Rev 1. 2006.Oct

Details are subject to change without notice .

http://www.cetsemi.com

6 - 66

12 3 4

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