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CEU603AL PDF预览

CEU603AL

更新时间: 2024-02-22 21:14:53
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
5页 42K
描述
30V N Channel MOS

CEU603AL 数据手册

 浏览型号CEU603AL的Datasheet PDF文件第2页浏览型号CEU603AL的Datasheet PDF文件第3页浏览型号CEU603AL的Datasheet PDF文件第4页浏览型号CEU603AL的Datasheet PDF文件第5页 
CED603AL/CEU603AL  
March 1998  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
FEATURES  
30V , 20A , RDS(ON)=22m  
@VGS=10V.  
@VGS=4.5V.  
D
RDS(ON)=40m  
6
Super high dense cell design for extremely low RDS(ON)  
High power and current handling capability.  
TO-251 & TO-252 package.  
.
G
D
G
S
CEU SERIES  
TO-252AA(D-PAK)  
CED SERIES  
TO-251(l-PAK)  
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)  
Limit  
Unit  
V
Parameter  
Symbol  
Drain-Source Voltage  
30  
V
DS  
V
GS  
V
Gate-Source Voltage  
Ȁ20  
Ć
I
D
20  
77  
20  
A
Drain Current-Continuous @T  
-Pulsed  
J
=125 C  
I
DM  
A
Drain-Source Diode Forward Current  
Maximum Power Dissipation  
I
S
A
50  
W
@Tc=25 C  
P
D
Derate above 25 C  
0.3  
W/ C  
Operating and Storage Temperature Range  
T
J
, TSTG  
-55 to 175  
C
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
C/W  
C/W  
R
įJC  
3
50  
RįJA  
6-37  

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