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CEU6030L PDF预览

CEU6030L

更新时间: 2024-11-02 03:25:15
品牌 Logo 应用领域
华瑞 - CET 晶体晶体管
页数 文件大小 规格书
4页 83K
描述
N-Channel Enhancement Mode Field Effect Transistor

CEU6030L 数据手册

 浏览型号CEU6030L的Datasheet PDF文件第2页浏览型号CEU6030L的Datasheet PDF文件第3页浏览型号CEU6030L的Datasheet PDF文件第4页 
CED6030L/CEU6030L  
N-Channel Enhancement Mode Field Effect Transistor  
FEATURES  
30V, 40A, RDS(ON) = 15.5m@VGS = 10V.  
RDS(ON) = 22m@VGS = 4.5V.  
Super high dense cell design for extremely low RDS(ON)  
.
High power and current handing capability.  
Lead free product is acquired.  
D
TO-251 & TO-252 package.  
G
D
G
S
CEU SERIES  
TO-252(D-PAK)  
CED SERIES  
TO-251(I-PAK)  
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted  
c
Parameter  
Symbol  
VDS  
VGS  
ID  
Limit  
Units  
V
Drain-Source Voltage  
30  
Gate-Source Voltage  
±20  
40  
V
Drain Current-Continuous  
A
Drain Current-Pulsed a  
IDM  
120  
A
Maximum Power Dissipation @ TC = 25 C  
- Derate above 25 C  
50  
W
PD  
0.3  
W/ C  
C
Operating and Store Temperature Range  
TJ,Tstg  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Limit  
3
Units  
C/W  
C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
RθJA  
50  
1998.March  
http://www.cetsemi.com  
6 - 78  

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