Datasheet > CDM22011-600LRFP

CDM22011-600LRFP

更新时间： 2024-11-25 14:54:43

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	965K
描述
11A,600V Through-Hole MOSFET N-Channel Enhancement Mode - UltraMOS

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CDM22011-600LRFP 数据手册

CDM22011-600LRFP

www.centralsemi.com

N-CHANNEL

LR POWER MOSFET

11 AMP, 600 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CDM22011-600LRFP

is a 600 volt N-Channel MOSFET designed for high

voltage, fast switching applications such as Power

Factor Correction (PFC), lighting and power inverters.

This UltraMOS^TMMOSFET combines high voltage

capability with ultra low r

and low gate charge for optimal efficiency.

, low threshold voltage,

DS(ON)

MARKING CODE: CDM11-600LR

TO-220FP CASE

APPLICATIONS:

FEATURES:

Power Factor Correction

Alternative energy inverters

Solid State Lighting (SSL)

•

High voltage capability (V =600V)

Low gate charge (Q =4.45nC TYP)

•

Ultra low r

(0.3Ω TYP)

DS(ON)

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Drain-Source Voltage

600

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10μs

Continuous Source Current (Body Diode)

Maximum Pulsed Source Current (Body Diode)

Single Pulse Avalanche Energy (Note 1)

Power Dissipation

280

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-55 to +150

5.0

°C

°C/W

stg



Thermal Resistance

120

Note 1: L=30mH, I =4.0A, V =100V, R =25Ω, Initial T =25°C

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=30V, V =0

100

GSSF GSSR

=600V, V =0

0.047

1.0

ꢀA

DSS

=0, I =250μA

600

2.0

DSS

GS(th)

=V , I =250μA

3.09

0.92

0.30

2.76

763

4.0

1.4

GS DS

=0, I =11A

=10V, I =5.5A

0.36

DS(ON)

=100V, V =0, f=1.0MHz

rss

iss

=100V, V =0, f=1.0MHz

oss

R4 (19-August 2015)

12 3 4

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