Datasheet > CDM4-600LR

CDM4-600LR

更新时间： 2024-11-25 14:55:11

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
6页	648K
描述
4A,600V Surface mount MOSFET N-Channel Enhancement Mode - UltraMOS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CDM4-600LR 数据手册

CDM4-600LR

SURFACE MOUNT SILICON

N-CHANNEL

www.centralsemi.com

DESCRIPTION:

LR POWER MOSFET

4.0 AMP, 600 VOLT

The CENTRAL SEMICONDUCTOR CDM4-600LR is a

600 Volt N-Channel MOSFET designed for high voltage,

fast switching applications such as Power Factor

Correction (PFC), lighting and power inverters. This

UltraMOS^TMMOSFET combines high voltage capability

with ultra low r

gate charge for optimal efficiency.

, low threshold voltage, and low

DS(ON)

MARKING: FULL PART NUMBER

DPAK CASE

APPLICATIONS:

FEATURES:

Power Factor Correction

Alternative energy inverters

Solid State Lighting (SSL)

High voltage capability (V =600V)

Low gate charge (Q =2.78nC TYP)

•

Ultra low r

(0.77Ω TYP)

DS(ON)

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Drain-Source Voltage

600

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10µs

Continuous Source Current (Body Diode)

Maximum Pulsed Source Current (Body Diode)

Single Pulse Avalanche Energy (Note 1)

Power Dissipation

4.0

214

Operating and Storage Junction Temperature

Thermal Resistance

T , T

stg

-55 to +150

3.29

°C

°C/W

Thermal Resistance

110

Note 1: L=79mH, I =2.2A, V =100V, R =25Ω, Initial T =25°C

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=30V, V =0

100

GSSF GSSR

=600V, V =0

0.065

1.0

μA

DSS

=0, I =250µA

600

2.0

DSS

GS(th)

=V , I =250µA

3.25

0.86

0.77

3.0

4.0

1.4

GS DS

=0, I =5.0A

=10V, I =2.5A

0.88

DS(ON)

=100V, V =0, f=1.0MHz

rss

iss

=100V, V =0, f=1.0MHz

3.5

=100V, V =0, f=1.0MHz

16.9

oss

R4 (18-August 2023)

12 3 4 5 6

中文翻译

下载PDF

与CDM4-600LR相关器件

型号	品牌	获取价格	描述	数据表
CDM4-600LRTR13	CENTRAL	获取价格	Power Field-Effect Transistor, 4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Meta
CDM4-600LRTR13LEADFREE	CENTRAL	获取价格	Power Field-Effect Transistor,
CDM4-650	CENTRAL	获取价格	4A,650V Surface mount MOSFET N-Channel Enhancement Mode High Current
CDM5364AD	RENESAS	获取价格	CDM5364AD
CDM5364AE	RENESAS	获取价格	CDM5364AE
CDM5364E	RENESAS	获取价格	MASK ROM
CDM6116AC	ETC	获取价格	High-Reliability CMOS 2048-Word by 8-bit LSI Static RAM
CDM6116AC/3	ETC	获取价格	High-Reliability CMOS 2048-Word by 8-bit LSI Static RAM
CDM6116AD9	RENESAS	获取价格	CDM6116AD9
CDM6116AE2	RENESAS	获取价格	CDM6116AE2