Datasheet > CDM7-650

CDM7-650

更新时间： 2024-11-06 14:52:19

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
6页	818K
描述
7A,650V Surface mount MOSFET N-Channel Enhancement Mode High Current

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CDM7-650 数据手册

CDM7-650

SURFACE MOUNT SILICON

N-CHANNEL

MEDIUM POWER MOSFET

7.0 AMP, 650 VOLT

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CDM7-650 is a

650 volt N-Channel MOSFET designed for high voltage,

fast switching applications such as Power Factor

Correction (PFC), lighting and power inverters. This

MOSFET combines high voltage capability with low

, low threshold voltage, and low gate charge for

DS(ON)

optimal efficiency.

MARKING: FULL PART NUMBER

DPAK CASE

APPLICATIONS:

FEATURES:

Power Factor Correction

Alternative energy inverters

Solid state lighting

•

High voltage capability (V =650V)

•

Low gate charge (Q =5.0nC)

Low r

(1.35Ω)

DS(ON)

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Drain-Source Voltage

650

Gate-Source Voltage

7.0

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10µs

Continuous Source Current (Body Diode)

Maximum Pulsed Source Current (Body Diode)

Single Pulse Avalanche Energy (Note 1)

Power Dissipation

7.0

435

1.12

140

Power Dissipation (T =25°C)

Operating and Storage Junction Temperature

Thermal Resistance

T , T

stg

-55 to +150

0.89

110

°C

°C/W

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=30V, V =0

100

GSSF GSSR

=650V, V =0

0.03

1.0

μA

DSS

=0, I =250µA

650

2.0

DSS

GS(th)

=V , I =250µA

2.88

0.88

1.35

0.8

4.0

1.4

1.5

GS DS

=0, I =7.0A

=10V, I =3.5A

DS(ON)

=25V, V =0, f=1.0MHz

rss

iss

=25V, V =0, f=1.0MHz

754

=25V, V =0, f=1.0MHz

oss

Notes: (1) L=30mH, I =5.25A, V =50V, R =25Ω, Initial T =25°C

AS DD

R3 (22-August 2023)

12 3 4 5 6

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