Datasheet > CDM22012-800LRFP

CDM22012-800LRFP

更新时间： 2024-11-28 14:55:55

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
7页	742K
描述
12A,800V Through-Hole MOSFET N-Channel Enhancement Mode - UltraMOS

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CDM22012-800LRFP 数据手册

CDM22012-800LRFP

www.centralsemi.com

N-CHANNEL

LR POWER MOSFET

12 AMP, 800 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CDM22012-800LRFP

is an 800 volt N-Channel MOSFET designed for high

voltage, fast switching applications such as Power

Factor Correction (PFC), lighting and power inverters.

This MOSFET combines high voltage capability with

ultra low r

charge for optimal efficiency.

, low threshold voltage, and low gate

DS(ON)

MARKING CODE: CDM12-800LR

TO-220FP CASE

APPLICATIONS:

FEATURES:

Power Factor Correction

Alternative energy inverters

Solid State Lighting (SSL)

•

High voltage capability (V =800V)

Low gate charge (Q =7.6nC TYP)

•

Ultra low r

(0.37Ω TYP)

DS(ON)

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Drain-Source Voltage

800

Gate-Source Voltage

Continuous Drain Current (Steady State)

Continuous Drain Current (T =100°C Steady State)

7.7

Maximum Pulsed Drain Current, tp=10μs

Continuous Source Current (Body Diode)

Maximum Pulsed Source Current (Body Diode)

Single Pulse Avalanche Energy (Note 1)

Power Dissipation

702

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-55 to +150

3.13

°C

°C/W

stg



Thermal Resistance

62.5

Note 1: L=79mH, I =4.0A, V =100V, R =25Ω, Initial T =25°C

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=30V, V =0

100

GSSF GSSR

=800V, V =0

1.0

ꢀA

DSS

=0, I =250μA

800

2.0

DSS

GS(th)

=V , I =250μA

4.0

1.4

GS DS

=0, I =12A

=10V, I =6.0A

0.37

9.5

0.45

DS(ON)

=100V, V =0, f=1.0MHz

rss

iss

=100V, V =0, f=1.0MHz

1,090

55.2

=100V, V =0, f=1.0MHz

oss

R1 (7-March 2016)

12 3 4 5 6 7

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