Datasheet > CDM2208-800FP

CDM2208-800FP

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
6页	995K
描述
8A,800V Through-Hole MOSFET N-Channel Enhancement Mode High Current

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CDM2208-800FP 数据手册

CDM2208-800FP

www.centralsemi.com

SILICON

N-CHANNEL POWER MOSFET

8.0 AMP, 800 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CDM2208-800FP

is an 800 volt N-Channel MOSFET designed for high

voltage, fast switching applications such as Power

Factor Correction (PFC), lighting and power inverters.

This MOSFET combines high voltage capability with

low r

, low threshold voltage, and low gate charge

DS(ON)

for optimal efficiency.

MARKING CODE: CDM8-800FP

TO-220FP CASE

APPLICATIONS:

FEATURES:

Power Factor Correction

Alternative energy inverters

Solid State Lighting (SSL)

•

High voltage capability (V =800V)

•

=24.45nC TYP)

Low gate charge (Q

g(tot)

Low r

DS(ON)

(1.42Ω TYP)

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Drain-Source Voltage

800

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10μs

Continuous Source Current (Body Diode)

Maximum Pulsed Source Current (Body Diode)

Single Pulse Avalanche Energy (Note 1)

Power Dissipation

8.0

534

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-55 to +150

2.19

120

°C

°C/W

stg



Thermal Resistance

Note 1: L=30mH, I =5.5A, V =135V, R =25Ω, Initial T =25°C

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=30V, V =0

100

GSSF GSSR

=800V, V =0

0.05

1.0

ꢀA

DSS

=0, I =250μA

800

2.0

DSS

GS(th)

=V , I =250μA

2.9

0.9

4.0

1.4

1.6

GS DS

=0, I =8.0A

=10V, I =4.0A

1.42

2.7

DS(ON)

=25V, V =0, f=1.0MHz

rss

iss

=25V, V =0, f=1.0MHz

1110

104

=25V, V =0, f=1.0MHz

oss

R4 (23-December 2015)

12 3 4 5 6

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