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CD214B-F250 PDF预览

CD214B-F250

更新时间: 2024-11-11 03:21:43
品牌 Logo 应用领域
伯恩斯 - BOURNS 整流二极管光电二极管
页数 文件大小 规格书
4页 356K
描述
CD214B-F250~F2600 Surface Mount Fast Response Rectifiers

CD214B-F250 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.25其他特性:LOW LEAKAGE CURRENT
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:50 V表面贴装:YES
端子面层:Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CD214B-F250 数据手册

 浏览型号CD214B-F250的Datasheet PDF文件第2页浏览型号CD214B-F250的Datasheet PDF文件第3页浏览型号CD214B-F250的Datasheet PDF文件第4页 
Features  
Lead free as standard  
RoHS compliant*  
Glass passivated chip  
Low reverse leakage current  
Low forward voltage drop  
High current capability  
CD214B-F250~F2600 Surface Mount Fast Response Rectifiers  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components. Bourns offers Surface Mount Fast Response Rectifiers for rectification applications, in compact  
chip DO-214AA (SMB) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Fast  
Response Rectifier Diodes offer a forward current of 2.0 A with a choice of repetitive peak reverse voltages of 50 V up to 600 V.  
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
CD214B-  
Parameter  
Symbol  
Unit  
F250  
F2100  
F2150  
F2200  
F2400  
F2600  
Maximum Repetitive  
Peak Reverse Voltage  
V
V
50  
100  
150  
105  
150  
200  
400  
600  
V
V
V
RRM  
Maximum RMS Voltage  
35  
50  
70  
140  
200  
280  
400  
420  
600  
RMS  
Maximum DC  
Blocking Voltage  
V
100  
DC  
Max. Average Forward  
Rectified Current1  
I
2.0  
5.0  
A
(AV)  
DC Reverse Current @  
Rated DC Blocking Voltage  
I
µA  
R
R
(@T = 25 °C)  
J
DC Reverse Current @  
Rated DC Blocking Voltage  
I
350  
200  
µA  
(@T = 125 °C)  
J
Typical Junction Capacitance2  
C
J
pF  
V
Maximum Instantaneous  
Forward Voltage @ 1 A  
V
F
0.92  
1.25  
1.30  
Typical Thermal Resistance3  
R
15  
50  
°C/W  
θJL  
Peak forward surge current  
8.3 ms single half sine-wave  
superimposed on rated load  
(JEDEC Method)  
I
A
FSM  
Notes:  
1 See Figure 1.  
2 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC.  
3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 ˝ x 0.2 ˝ (5.0 mm x 5.0 mm) copper pad areas.  
Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
TJ  
CD214B-F250~F2600  
-55 to +125  
Unit  
Operating Temperature Range  
Storage Temperature Range  
°C  
°C  
TSTG  
-55 to +150  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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